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IDT71V416S15PHGI

Renesas Electronics

IDT71V416S15PHGI by Renesas Electronics

The Renesas Electronics IDT71V416S15PHGI is a 256Kx16 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a max access time of 15ns and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage with a compact small outline package design.

Median Price

$13.282

Lifecycle Status

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8

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Freelance Electronics

USA . 23 parts In-Stock

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$13.282

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$13.947

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Corohmni

South Africa . 465 parts In-Stock

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AZTECH Wire

Italy . 531 parts In-Stock

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Semicontronic

India . 1,602 parts In-Stock

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Ampacity Inc.

Singapore . 676 parts In-Stock

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Overview

Experience the superior quality and performance of Renesas Electronics with the IDT71V416S15PHGI SRAM memory chip. Ideal for a wide range of applications, this product offers reliability and efficiency like no other. With a compact design and advanced technology, customers can trust in the value and benefits this memory chip provides. Upgrade your electronics with the best in the industry and see the difference for yourself. Renesas Electronics - leading the way in innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the internal components of the SRAM, ensuring long-term reliability.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without requiring a clock signal, providing flexibility and simplicity in design.

Nominal Supply Voltage: 3.3V

Optimal voltage for efficient performance and power consumption, making it suitable for a wide range of applications.

Maximum Operating Temperature: 85°C

Ensures stability and reliability of the SRAM even under high temperature conditions, ideal for industrial environments.

Organization: 256KX16

High organization allows for efficient data storage and access, increasing the functionality of the SRAM.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the overall performance of the SRAM.

Technical Specifications

SRAM IDT71V416S15PHGI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

15 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

170 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IDT71V416S15PHGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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