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23A640-I/P

Microchip Technology

23A640-I/P by Microchip Technology

23A640-I/P by Microchip Technology is an 8Kx8 SRAM with 16 MHz clock frequency, operating at -40 to 85 °C. It features a CMOS technology, serial interface, and 65536 bit memory density. Ideal for industrial applications requiring reliable synchronous memory solutions.

Median Price

$0.820

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 60 parts In-Stock

1+ parts

$0.230

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-

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60

$0.230

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RS Americas

USA . 60 parts In-Stock

1+ parts

$0.550

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60

$0.550

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Microchip Technology

USA . 840 parts In-Stock

1+ parts

$0.820

100+ parts

$0.770

1k+ parts

$0.720

10k+ parts

$0.680

840

$0.820

$0.770

$0.720

$0.680

DigiKey

USA . 437 parts In-Stock

1+ parts

$0.820

100+ parts

$0.770

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437

$0.820

$0.770

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Mouser Electronics

USA . 479 parts In-Stock

1+ parts

$0.880

100+ parts

$0.852

1k+ parts

$0.820

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479

$0.880

$0.852

$0.820

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 47 parts In-Stock

1+ parts

$0.798

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-

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47

$0.798

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NAC Semi

USA . 660 parts In-Stock

1+ parts

$0.850

100+ parts

$0.760

1k+ parts

$0.690

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660

$0.850

$0.760

$0.690

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Vyrian

USA . 6,373 parts In-Stock

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VNN

France . 1,703 parts In-Stock

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Semi Source

USA . 60 parts In-Stock

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60

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 257 parts In-Stock

1+ parts

$0.468

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257

$0.468

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Continental Prestige Electronics

USA . 2,953 parts In-Stock

1+ parts

$0.798

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$0.782

2,953

$0.798

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$0.782

Argo Parts USA

USA . 1,250 parts In-Stock

1+ parts

$0.798

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1,250

$0.798

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Allen Electronics Distributors

USA . 60 parts In-Stock

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$1.260

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$1.260

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Fulton Briggs Corp.

USA . 6,656 parts In-Stock

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Perfect Parts

USA . 1,014 parts In-Stock

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1,014

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Overview

Unlock the power of reliable data storage with the 23A640-I/P by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality SRAM products that guarantee exceptional performance and durability. Ideal for a wide range of applications, this versatile memory device offers customers a valuable solution for their storage needs. Trust in the trusted brand, enjoy the benefits of seamless operation, and elevate your projects to the next level with the 23A640-I/P.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the SRAM, ensuring long-lasting performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates efficiently at a standard voltage of 1.8V, making it compatible with a wide range of systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures up to 85°C, making it suitable for industrial environments where heat may be a factor.

Memory Density: 65536 bit

High memory density of 65536 bits allows for storage of a large amount of data in a compact SRAM package.

Maximum Clock Frequency (fCLK): 16 MHz

With a high maximum clock frequency of 16 MHz, this SRAM can process data quickly and efficiently.

Technology: CMOS

Built with CMOS technology, known for its low power consumption and high noise immunity, making this SRAM energy efficient and reliable.

Technical Specifications

SRAM 23A640-I/P attributes and parameters. Explore more SRAM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

16 MHz

Input/Output Type:

SEPARATE

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.271 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

1.8

Qualification:

Not Qualified

Screening Level:

TS 16949

Maximum Seated Height:

5.334 mm

Maximum Standby Current:

.000001 Amp

Minimum Standby Voltage:

1.5 V

Sub-Category:

SRAMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.5 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

23A640-I/P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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