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AS6C3216-55TIN

Alliance Memory

AS6C3216-55TIN by Alliance Memory

Alliance Memory's AS6C3216-55TIN is a 2MX16 SRAM with 55 ns access time, operating at 3V. Ideal for industrial applications, it offers a memory density of 33554432 bits and features a small outline package with thin profile. With common I/O type and asynchronous operation, this CMOS technology-based SRAM is suitable for various parallel memory applications.

Median Price

$27.100

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$27.100

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Vyrian

USA . 5,279 parts In-Stock

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VNN

France . 1,716 parts In-Stock

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Kruse Electronics AG

Switzerland . 156 parts In-Stock

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AZTECH Wire

Italy . 414 parts In-Stock

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$10.163

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Continental Prestige Electronics

USA . 5,544 parts In-Stock

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$27.100

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$26.558

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QUARKTWIN TECHNOLOGY LTD

USA . 6,985 parts In-Stock

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Argo Parts USA

USA . 3,919 parts In-Stock

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Overview

Experience the superior quality and reliability of Alliance Memory's AS6C3216-55TIN SRAM. This versatile memory solution is perfect for a wide range of applications, offering fast access times and low power consumption. With a compact design and advanced technology, this product provides exceptional value and performance for your projects. Trust Alliance Memory to deliver top-notch memory solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the product, making it suitable for various applications.

Surface Mount: YES

Allows for easy installation and integration onto circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Provides flexibility and efficiency in data transfer operations.

Nominal Supply Voltage / Vsup (V): 3

Stable supply voltage for consistent performance and operation.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact size for space-saving design and easy integration in compact electronic devices.

Technology: CMOS

Low power consumption and high speed operation, ideal for energy-efficient applications.

Maximum Access Time: 55 ns

Fast access time for quick data retrieval and processing.

Technical Specifications

SRAM AS6C3216-55TIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

Alternate Memory Width:

8

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.002 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

AS6C3216-55TIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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