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AS6C8008-55BIN

Alliance Memory

AS6C8008-55BIN by Alliance Memory

Alliance Memory's AS6C8008-55BIN is a 1MX8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features a low profile grid array package and common I/O type. With 8388608-bit memory density, this CMOS technology-based chip offers fast parallel data processing.

Median Price

$7.840

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8 parts In-Stock

1+ parts

$7.840

100+ parts

$6.730

1k+ parts

$6.250

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8

$7.840

$6.730

$6.250

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DigiKey

USA . 1,104 parts In-Stock

1+ parts

$13.750

100+ parts

$11.776

1k+ parts

$11.119

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1,104

$13.750

$11.776

$11.119

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Verical

USA . 480 parts In-Stock

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$6.180

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480

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$6.180

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$5.800

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100

$5.800

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VNN

France . 22,322 parts In-Stock

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Kruse Electronics AG

Switzerland . 2,856 parts In-Stock

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ARCO, INC.

USA . 2,800 parts In-Stock

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2,800

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Rutronik

Germany . 1,440 parts In-Stock

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$10.060

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Vyrian

USA . 532 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,015 parts In-Stock

1+ parts

$3.563

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$3.563

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Continental Prestige Electronics

USA . 908 parts In-Stock

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$5.800

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$5.684

908

$5.800

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$5.684

Component Stockers USA

USA . 2,196 parts In-Stock

1+ parts

$7.520

100+ parts

$6.060

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2,196

$7.520

$6.060

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Argo Parts USA

USA . 724 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

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Kepictronics

USA . 60 parts In-Stock

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Overview

Alliance Memory brings you the AS6C8008-55BIN, a top-of-the-line SRAM memory chip that promises unparalleled performance and reliability. With a focus on quality and innovation, Alliance Memory ensures that each product meets the highest industry standards. This versatile memory chip is perfect for a wide range of applications, providing customers with a seamless and efficient solution for their memory needs. Trust Alliance Memory to deliver value, benefits, and advantages with the AS6C8008-55BIN, setting new standards in memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable electronic devices.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation on circuit boards.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for faster data transfer and handling, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard 3V supply voltage, ensuring compatibility with a wide range of electronic systems.

Maximum Operating Temperature: 85 °C

With a high operating temperature range of 85°C, this product can withstand demanding environmental conditions.

Memory Density: 8388608 bit

High memory density allows for storing a large amount of data in a compact form factor.

Technical Specifications

SRAM AS6C8008-55BIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00005 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

AS6C8008-55BIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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