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AS6C4008-55BIN

Alliance Memory

AS6C4008-55BIN by Alliance Memory

Alliance Memory's AS6C4008-55BIN is a 512Kx8 SRAM with 55ns access time, operating at 3V. It features a thin profile grid array package and common I/O type. Ideal for industrial applications requiring fast and reliable memory performance.

Median Price

$4.323

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 1,920 parts In-Stock

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1,920

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RS (Exports)

UK . 960 parts In-Stock

1+ parts

-

100+ parts

$4.323

1k+ parts

$4.227

10k+ parts

-

960

-

$4.323

$4.227

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$4.207

100+ parts

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300

$4.207

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Vyrian

USA . 7,626 parts In-Stock

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7,626

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VNN

France . 2,471 parts In-Stock

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2,471

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Kruse Electronics AG

Switzerland . 960 parts In-Stock

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960

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Cogito LLC

Ukraine . 772 parts In-Stock

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772

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$4.123

100+ parts

-

1k+ parts

$3.958

10k+ parts

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1,000

$4.123

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$3.958

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Continental Prestige Electronics

USA . 4,639 parts In-Stock

1+ parts

$4.207

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$4.123

4,639

$4.207

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$4.123

Argo Parts USA

USA . 767 parts In-Stock

1+ parts

$4.207

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767

$4.207

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Component Stockers USA

USA . 6 parts In-Stock

1+ parts

$5.430

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6

$5.430

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Aztec Data Supply Inc.

USA . 50 parts In-Stock

1+ parts

$5.822

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50

$5.822

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AZTECH Wire

Italy . 597 parts In-Stock

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$12.552

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597

$12.552

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Kepictronics

USA . 266 parts In-Stock

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266

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Overview

Discover the AS6C4008-55BIN by Alliance Memory, a top-tier SRAM that promises high-quality performance and reliability. With a focus on excellence in manufacturing, Alliance Memory ensures that their products meet the highest standards for various applications. This versatile memory device offers customers outstanding value, benefits, and advantages, making it a smart choice for any project. Upgrade your system with the AS6C4008-55BIN and experience seamless operation and enhanced efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ensures longevity and easy handling of the product.

Operating Mode: ASYNCHRONOUS

Provides flexibility in operation and communication with other components.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage supply for efficient performance of the product.

No. of Terminals: 36

Sufficient number of terminals for connectivity and functionality.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and reliable operation.

Memory Width: 8

8-bit memory width allows for storing and retrieving data efficiently.

Maximum Access Time: 55 ns

Fast access time ensures quick data retrieval and processing.

Technical Specifications

SRAM AS6C4008-55BIN attributes and parameters. Explore more SRAM devices from Alliance Memory

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B36

Length:

8 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA36,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00003 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

AS6C4008-55BIN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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