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71V424S10PHGI8

Renesas Electronics

71V424S10PHGI8 by Renesas Electronics

The Renesas Electronics 71V424S10PHGI8 is a 512Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a small outline package, industrial temperature grade, and Gull Wing terminal form. Ideal for applications requiring fast access times and low standby current in industrial environments.

Median Price

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Lifecycle Status

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3

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1k+

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VNN

France . 1,394 parts In-Stock

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Nova Conductors

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Vyrian

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Corohmni

South Africa . 163 parts In-Stock

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$2.092

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Aztec Data Supply Inc.

USA . 1,348 parts In-Stock

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AZTECH Wire

Italy . 189 parts In-Stock

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Semicontronic

India . 478 parts In-Stock

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$11.000

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$10.725

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$10.670

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Ampacity Inc.

Singapore . 860 parts In-Stock

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$22.000

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Microchip USA

USA . 3,243 parts In-Stock

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Argo Parts USA

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Continental Prestige Electronics

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Bastille Electronics

Australia . 300 parts In-Stock

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Modulus Dynamics

Lithuania . 47 parts In-Stock

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Overview

Experience unparalleled quality and reliability with Renesas Electronics' 71V424S10PHGI8 SRAM. Designed for industrial applications, this memory module offers a seamless performance with its advanced technology and innovative features. With a compact package size and common input/output type, this product provides exceptional value and benefits to customers seeking efficient data storage solutions. Trust Renesas Electronics for cutting-edge technology that delivers superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures the product is long-lasting and easy to handle.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a commonly used voltage, making it compatible with various systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments.

Organization: 512KX8

Offers a large memory organization, allowing for efficient data storage and retrieval.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides corrosion resistance and promotes strong solder joints.

Maximum Access Time: 10 ns

Delivers fast access times, enabling quick data retrieval and processing.

Technical Specifications

SRAM 71V424S10PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

71V424S10PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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