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IS61WV51216BLL-10MLI

Integrated Silicon Solution

IS61WV51216BLL-10MLI by Integrated Silicon Solution

IS61WV51216BLL-10MLI by Integrated Silicon Solution is a 512Kx16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and offers common I/O type for industrial applications requiring fast and reliable memory storage.

Median Price

$21.090

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

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Farnell

UK . 50 parts In-Stock

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$12.860

100+ parts

$9.930

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$12.860

$9.930

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Mouser Electronics

USA . 1,190 parts In-Stock

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$21.090

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$17.960

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$21.090

$17.960

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DigiKey

USA . 813 parts In-Stock

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$21.090

100+ parts

$18.474

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$17.090

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813

$21.090

$18.474

$17.090

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Element14

Singapore . 50 parts In-Stock

1+ parts

$22.470

100+ parts

$18.380

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50

$22.470

$18.380

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EBV Elektronik

Germany . 630 parts In-Stock

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Avnet

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Verical

USA . 110 parts In-Stock

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$22.931

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110

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$22.931

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Distributors (In-Stock)

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Freelance Electronics

USA . 5 parts In-Stock

1+ parts

$9.774

100+ parts

$10.263

1k+ parts

$9.676

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5

$9.774

$10.263

$9.676

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EXC GmbH

Germany . 5 parts In-Stock

1+ parts

$14.894

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5

$14.894

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Nova Conductors

Japan . 10 parts In-Stock

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$15.430

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$15.430

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Chip Stock

USA . 8,100 parts In-Stock

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Vyrian

USA . 4,960 parts In-Stock

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4,960

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J2 Sourcing AB

Sweden . 1,654 parts In-Stock

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Semtec, LLC

USA . 1,300 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 444 parts In-Stock

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SPM Sales

USA . 123 parts In-Stock

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Martec Srl

Italy . 45 parts In-Stock

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Zilex Electronics Inc.

Canada . 10 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 6 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,177 parts In-Stock

1+ parts

$2.570

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3,177

$2.570

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Corohmni

South Africa . 155 parts In-Stock

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$5.099

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$5.099

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Continental Prestige Electronics

USA . 50 parts In-Stock

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$13.650

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$10.550

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$13.650

$10.550

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Bastille Electronics

Australia . 99 parts In-Stock

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$15.430

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$14.658

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$13.733

99

$15.430

$14.658

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$13.733

RC Electronics

USA . 9,000 parts In-Stock

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Argo Parts USA

USA . 2,340 parts In-Stock

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Perfect Parts

USA . 1,374 parts In-Stock

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Overview

Unlock lightning-fast data storage and retrieval with the IS61WV51216BLL-10MLI by Integrated Silicon Solution. Designed for industrial-grade applications, this SRAM memory chip offers unparalleled reliability and performance. With a 512Kx16 organization and 3-STATE output characteristics, this memory IC provides seamless integration and optimal functionality. Experience the advantage of common input/output type and asynchronous operation mode, all in a compact GRID ARRAY package with a slim profile. Trust ISS to deliver cutting-edge technology for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides a lightweight and durable casing for the SRAM, making it suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage ensures compatibility with a wide range of systems and devices, making it a versatile choice for integration.

Technology: CMOS

The CMOS technology used in this SRAM ensures low power consumption while maintaining high performance, making it efficient and cost-effective.

Maximum Access Time: 10 ns

The fast access time of 10 ns ensures quick and efficient data retrieval, making it suitable for applications that require high-speed operations.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this SRAM can withstand moderate exposure to moisture during storage and handling, ensuring reliability in various environments.

Technical Specifications

SRAM IS61WV51216BLL-10MLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

1.2 V

Sub-Category:

SRAMs

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

9 mm

Trade Compliance

IS61WV51216BLL-10MLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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