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IS61WV102416BLL-10MLI-TR

Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution

IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 16-bit memory width and 16777216 bit density. Operating at 3.3V, it offers a max access time of 10ns and peak reflow temperature of 260°C. Ideal for industrial applications requiring fast and reliable parallel memory storage solutions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,667 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Aztec Data Supply Inc.

USA . 3,471 parts In-Stock

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$2.700

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$2.700

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Corohmni

South Africa . 89 parts In-Stock

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$5.602

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AZTECH Wire

Italy . 744 parts In-Stock

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$12.517

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,079 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 941 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the IS61WV102416BLL-10MLI-TR by Integrated Silicon Solution. This high-quality SRAM memory device offers unmatched performance and reliability, making it perfect for a wide range of industrial applications. With a superior package design and advanced CMOS technology, this memory IC provides fast access times and low power consumption. Upgrade your systems with the IS61WV102416BLL-10MLI-TR and experience seamless operation and improved efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Surface Mount: YES

Easy to install and saves space on the PCB.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the SRAM, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Standard voltage that ensures compatibility with most systems.

No. of Terminals: 48

Sufficient number of terminals for proper connectivity.

Maximum Operating Temperature: 85 °C

Can operate at high temperatures without any issues.

Organization: 1MX16

High memory density in a compact form factor.

Minimum Standby Voltage: 2.4 V

Allows for low power consumption in standby mode.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance.

Maximum Seated Height: 1.2 mm

Low profile design for space-constrained applications.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with wide temperature ranges.

No. of Words: 1048576 words

Large memory capacity for storing data.

Memory Width: 16

Provides ample data width for fast access.

Maximum Supply Current: 95 mA

Low power consumption for energy efficiency.

No. of Words Code: 1M

Easy reference to the memory capacity of the SRAM.

Maximum Access Time: 10 ns

Fast access time for quick data retrieval.

Technical Specifications

SRAM IS61WV102416BLL-10MLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.025 Amp

Minimum Standby Voltage:

2.4 V

Maximum Supply Current:

95 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.4 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

10

Width:

9 mm

Trade Compliance

IS61WV102416BLL-10MLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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