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IS62WV102416DBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at an industrial temperature grade of -40 to 85 °C, it offers a max access time of 45 ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 8,000 parts In-Stock

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Vyrian

USA . 7,172 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$3.960

100+ parts

$3.604

1k+ parts

$3.247

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10

$3.960

$3.604

$3.247

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AZTECH Wire

Italy . 399 parts In-Stock

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$17.864

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399

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Continental Prestige Electronics

USA . 2,243 parts In-Stock

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Argo Parts USA

USA . 1,626 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Experience the pinnacle of quality and reliability with the IS62WV102416DBLL-45TLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers cutting-edge technology and innovation in their SRAM products. This memory device offers unparalleled performance, making it ideal for a wide range of applications. Elevate your projects with the unmatched value, benefits, and advantages that this product provides, ensuring seamless operation and optimal efficiency. Trust ISS to deliver top-notch solutions for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the IC, ensuring a long lifespan for the product.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Operating Mode: ASYNCHRONOUS

Enables data to be accessed independently without needing synchronization, increasing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage for efficient performance while also being within safe operating limits.

No. of Terminals: 48

Provides ample connection points for interfacing with other components in the system.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments where heat may be a concern.

Memory Density: 16777216 bit

High memory density allows for storage of a large amount of data in a compact package.

Maximum Access Time: 45 ns

Fast access time ensures quick retrieval of data, making it ideal for applications requiring high-speed operation.

Technical Specifications

SRAM IS62WV102416DBLL-45TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

IS62WV102416DBLL-45TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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