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IS62C1024L-70WI

Integrated Silicon Solution

IS62C1024L-70WI by Integrated Silicon Solution

IS62C1024L-70WI by Integrated Silicon Solution is a 128Kx8 SRAM with 70ns access time. Operating at 5V, it features asynchronous mode and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage.

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Overview

Looking for a reliable SRAM solution? Look no further than the IS62C1024L-70WI by Integrated Silicon Solution. With a reputable manufacturer like ISS behind it, this product offers top-notch quality and performance. Ideal for various applications, this SRAM boasts a 128KX8 organization, 3-state output characteristics, and an industrial temperature grade. Offering a wide operating temperature range, low standby voltage, and fast access time of 70 ns, this memory IC provides exceptional value and benefits to customers looking for a dependable memory solution. Choose ISS for all your memory needs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions.

Package Shape: RECTANGULAR

Standard shape for easy integration into circuit boards.

Operating Mode: ASYNCHRONOUS

Allows for independent and flexible operation.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage for reliable performance.

Power Supplies (V): 5

Consistent power supply for efficient operation.

No. of Terminals: 32

Sufficient terminals for connectivity and data transfer.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments.

Organization: 128KX8

Organized memory layout for efficient data storage.

Output Characteristics: 3-STATE

Enables multiple output states for flexibility.

Minimum Standby Voltage: 2 V

Efficient standby mode with low voltage requirement.

Minimum Operating Temperature: -40 °C

Can operate in low temperature environments.

Terminal Finish: TIN LEAD

Conductive finish for good electrical contact.

Terminal Position: DUAL

Dual terminal position for enhanced connectivity.

Maximum Seated Height: 4.572 mm

Compact design for space-saving installation.

Width: 15.24 mm

Narrow width for easy PCB layout.

Minimum Supply Voltage (Vsup): 4.5 V

Lower limit of supply voltage for efficient operation.

Length: 41.91 mm

Optimal length for standard PCB dimensions.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with varying temperatures.

Technology: CMOS

High-performance CMOS technology for reliable operation.

Parallel or Serial: PARALLEL

Parallel data transfer for faster processing.

Terminal Form: THROUGH-HOLE

Through-hole terminals for secure mounting on PCB.

Maximum Supply Current: 80 mA

Low supply current for energy efficiency.

No. of Words: 131072 words

Large memory capacity for storing data.

Memory Width: 8

Wide memory width for data transfer efficiency.

Terminal Pitch: 2.54 mm

Standard terminal pitch for easy soldering.

No. of Words Code: 128K

Large memory code for extensive data storage.

Maximum Supply Voltage (Vsup): 5.5 V

Higher limit of supply voltage for versatility.

Memory Density: 1048576 bit

High memory density for large-scale data storage.

Memory IC Type: STANDARD SRAM

Reliable and standard SRAM memory type.

Output Enable: YES

Output enable feature for control over data output.

Maximum Standby Current: 0.0004 Amp

Ultra-low standby current for energy savings.

Maximum Access Time: 70 ns

Fast access time for quick data retrieval.

Technical Specifications

SRAM IS62C1024L-70WI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e0

Length:

41.91 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Maximum Standby Current:

.0004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

IS62C1024L-70WI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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