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IS62WV10248DBLL-55TLI

Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution

IS62WV10248DBLL-55TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 55 ns. It features a supply voltage of 1.8V, suitable for commercial applications requiring fast and reliable memory access in a small outline package. With a memory density of 8388608 bit and parallel interface, it offers high-speed data storage solutions.

Median Price

$6.232

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 64 parts In-Stock

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$6.232

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Vyrian

USA . 13,462 parts In-Stock

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Chip Stock

USA . 2,734 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,788 parts In-Stock

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$2.540

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Corohmni

South Africa . 380 parts In-Stock

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$5.970

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Continental Prestige Electronics

USA . 2,094 parts In-Stock

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$6.232

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$6.107

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Netroflash

USA . 1,000 parts In-Stock

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$6.232

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$5.920

10k+ parts

$5.796

1,000

$6.232

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$5.796

AZTECH Wire

Italy . 666 parts In-Stock

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$12.054

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Argo Parts USA

USA . 2,336 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

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Overview

Upgrade your electronic devices with the IS62WV10248DBLL-55TLI SRAM from Integrated Silicon Solution, a leading manufacturer in memory IC technology. This high-quality product offers fast access times, low power consumption, and 3-state output characteristics. Perfect for applications requiring reliable data storage, this SRAM operates asynchronously and comes in a small outline package for easy integration. Trust ISS to deliver cutting-edge solutions that enhance the performance and efficiency of your designs. Experience the difference with the IS62WV10248DBLL-55TLI today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the SRAM, making it a reliable choice for various applications.

Surface Mount: YES

With the ability to be surface mounted, this SRAM offers easy installation and compatibility with modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space and easy integration into circuit boards, making it a versatile option for compact designs.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode ensures fast and independent access to data, enhancing the performance of the SRAM in a variety of applications.

Input/Output Type: COMMON

Common input/output type simplifies connectivity and compatibility with other components, making this SRAM a convenient choice for many projects.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a nominal supply voltage of 1.8V, this SRAM offers energy efficiency and low power consumption, making it ideal for battery-powered devices.

Power Supplies (V): 2.5/3.3

Compatibility with power supplies of 2.5V and 3.3V allows for versatile use in different electronic systems, increasing the flexibility of this SRAM.

No. of Terminals: 44

With 44 terminals, this SRAM provides ample connectivity options for interfacing with other components, offering versatility in circuit design.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile package style saves space and enables compact device designs, making it a practical choice for space-constrained applications.

Maximum Operating Temperature: 70 °C

Operating at a maximum temperature of 70°C ensures reliable performance in various environments, making this SRAM suitable for industrial and commercial use.

Technical Specifications

SRAM IS62WV10248DBLL-55TLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00004 Amp

Minimum Standby Voltage:

1.4 V

Sub-Category:

SRAMs

Maximum Supply Current:

22 mA

Maximum Supply Voltage (Vsup):

2.2 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

IS62WV10248DBLL-55TLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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