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IS62WV102416FBLL-45BLI-TR

Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution

IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with a memory density of 16Mbit. It operates asynchronously at a max access time of 45ns and has a temperature grade suitable for industrial applications.

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Vyrian

USA . 650 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Aztec Data Supply Inc.

USA . 291 parts In-Stock

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$1.993

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Corohmni

South Africa . 32 parts In-Stock

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AZTECH Wire

Italy . 344 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Overview

Experience the ultimate in high-quality memory solutions with the IS62WV102416FBLL-45BLI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, Integrated Silicon Solution is known for its commitment to excellence and reliability. This SRAM device offers numerous advantages, making it the perfect choice for a wide range of applications. With its superior performance and advanced technology, this product ensures fast and efficient data storage and retrieval. Whether you're working on industrial projects or consumer electronics, the IS62WV102416FBLL-45BLI-TR provides the value, benefits, and advantages you need to stay ahead of the competition. Trust Integrated Silicon Solution for all your memory needs and unlock unparalleled possibilities for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product's package body material is made of durable and cost-effective plastic/epoxy, which ensures reliable protection and enables easy handling and installation.

Surface Mount: YES

The surface mount feature allows for convenient and efficient placement on the circuit board, saving valuable space and making it suitable for compact designs.

No. of Functions: 1

With a single function, this SRAM product simplifies the system design and enhances overall efficiency.

Package Shape: RECTANGULAR

The rectangular package shape offers a standardized form factor, ensuring compatibility with various devices and facilitating ease of integration.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables flexible and independent access to data, enhancing the versatility and reliability of the product in various applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V, this SRAM ensures compatibility with common voltage sources, contributing to seamless integration.

No. of Terminals: 48

With 48 terminals, this SRAM facilitates connectivity and enables efficient data transfer between the memory and other components.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The grid array package style, combined with a very thin profile and fine pitch, enables a high-density integration, making it ideal for compact and space-restricted applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM remains reliable and stable even under demanding thermal conditions.

Organization: 1MX16

With an organization of 1MX16, this SRAM offers a high memory capacity while efficiently storing and retrieving data in 16-bit increments.

Minimum Operating Temperature: -40 °C

Designed to withstand extreme temperatures, this SRAM can operate reliably even in harsh environments with temperatures as low as -40°C.

Terminal Position: BOTTOM

The bottom terminal position simplifies the mounting and soldering process, providing ease of use and enhancing the product's overall efficiency.

Maximum Seated Height: 1 mm

With a maximum seated height of 1mm, this SRAM ensures a low-profile design, making it suitable for applications where space is limited.

Width: 6 mm

With a width of 6mm, this SRAM offers a compact form factor, contributing to the ease of integration and enabling efficient board layout.

Minimum Supply Voltage (Vsup): 2.2 V

Operating at a minimum supply voltage of 2.2V, this SRAM provides flexibility and compatibility with different power sources.

Length: 8 mm

The 8mm length of this SRAM contributes to its compact size, allowing for efficient use of PCB space and aiding in miniaturization.

Temperature Grade: INDUSTRIAL

This SRAM is specifically designed for industrial applications, ensuring reliable performance and durability even in demanding environments.

Technology: CMOS

Utilizing CMOS technology, this SRAM offers low power consumption, high speed, and improved noise immunity, making it an efficient and reliable choice.

Parallel or Serial: PARALLEL

The parallel data transfer capability provides fast and simultaneous access to multiple bits, enhancing the overall system's performance and efficiency.

Terminal Form: BALL

With a ball terminal form, this SRAM simplifies the soldering process and offers reliable electrical connections, ensuring a robust and hassle-free installation.

No. of Words: 1048576 words

With an extensive 1048576-word capacity, this SRAM can store and retrieve a large volume of data, making it suitable for data-intensive applications.

Memory Width: 16

The 16-bit memory width allows for efficient data processing and compatibility with systems utilizing a 16-bit architecture, ensuring smooth and optimal performance.

Terminal Pitch: 0.75 mm

With a terminal pitch of 0.75mm, this SRAM enables compact and high-density PCB designs, facilitating efficient use of available space.

No. of Words Code: 1M

The inclusion of 1M words code ensures compatibility with common addressing schemes, simplifying integration and addressing requirements.

Maximum Supply Voltage (Vsup): 3.6 V

Designed to handle a maximum supply voltage of 3.6V, this SRAM offers flexibility and compatibility with various power sources.

Memory Density: 16777216 bit

With a high memory density of 16777216 bits, this SRAM provides ample storage capacity for data-intensive applications, offering efficient data handling and processing.

Memory IC Type: STANDARD SRAM

As a standard SRAM, this product ensures compatibility, reliability, and proven performance, making it a reliable choice for a wide range of applications.

Maximum Access Time: 45 ns

With a maximum access time of 45ns, this SRAM provides fast and responsive data access, improving system performance and overall efficiency.

Technical Specifications

SRAM IS62WV102416FBLL-45BLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PBGA-B48

Length:

8 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

IS62WV102416FBLL-45BLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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