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IS62C1024L-70W

Integrated Silicon Solution

IS62C1024L-70W by Integrated Silicon Solution

IS62C1024L-70W by Integrated Silicon Solution is a 128KX8 SRAM with 70ns access time and 3-STATE output. Operating at 5V, it has a memory density of 1048576 bit. Ideal for commercial applications requiring fast and reliable parallel memory storage.

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4

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1k+

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Vyrian

USA . 369 parts In-Stock

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369

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LWI Electronics Inc

India . 21 parts In-Stock

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Classic Components Corporation

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AZTECH Wire

Italy . 262 parts In-Stock

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$14.514

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Continental Prestige Electronics

USA . 3,293 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover unparalleled performance and reliability with the IS62C1024L-70W by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-notch SRAM memory solutions that exceed expectations. Perfect for a wide range of applications, this product offers superior quality, efficiency, and consistency. Revolutionize your projects with the value and benefits this advanced technology provides. Upgrade to ISS for unmatched innovation and results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronic designs, maximizing space efficiency.

Operating Mode: ASYNCHRONOUS

Asynchronous operation ensures fast and efficient data processing without the need for synchronization signals, enhancing overall performance.

Input/Output Type: COMMON

Common input/output type simplifies system connectivity and compatibility with other components, making integration seamless.

Nominal Supply Voltage (Vsup): 5V

The 5V supply voltage ensures stable and reliable operation, suitable for a wide range of applications.

No. of Terminals: 32

With 32 terminals, the product offers ample connection options for versatile circuit designs and configurations.

Package Style (Meter): IN-LINE

The in-line package style provides easy installation and replacement in electronic systems, minimizing downtime.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature allows the product to perform reliably in various environmental conditions.

Organization: 128KX8

The 128KX8 organization offers high memory density and efficient data storage capabilities for demanding applications.

Output Characteristics: 3-STATE

The 3-STATE output characteristics enable flexible control over output signal levels, enhancing system versatility.

Minimum Standby Voltage: 2V

The low minimum standby voltage helps conserve power and extend battery life, ideal for energy-efficient devices.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0°C, the product is suitable for use in both indoor and outdoor environments.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures reliable electrical connections and resistance to corrosion for long-lasting performance.

Terminal Position: DUAL

Dual terminal position options provide flexibility in circuit layout and assembly, accommodating various design requirements.

Maximum Seated Height: 4.572 mm

The compact maximum seated height allows for space-saving installation in tight electronic enclosures.

Width: 15.24 mm

The 15.24mm width of the product enables easy integration into standard electronic layouts and PCB designs.

Minimum Supply Voltage (Vsup): 4.5V

The 4.5V minimum supply voltage ensures stable operation even under fluctuating power conditions, enhancing reliability.

Length: 41.91 mm

The 41.91mm length provides a compact footprint for space-constrained applications and PCB layouts.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable operation within standard environmental conditions found in commercial settings.

Technology: CMOS

The CMOS technology used in the product offers low power consumption and high-speed performance, making it an energy-efficient choice.

Parallel or Serial: PARALLEL

The parallel data transfer mode enables fast and simultaneous data access, suitable for applications requiring high-speed processing.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies assembly and provides secure mechanical connections for rugged operating environments.

Maximum Supply Current: 70 mA

With a maximum supply current of 70 mA, the product offers efficient power consumption for extended battery life in portable devices.

No. of Words: 131072 words

The 131,072 words capacity provides ample memory storage for complex data processing tasks in demanding applications.

Memory Width: 8

The 8-bit memory width offers efficient data handling and processing capabilities for high-performance computing tasks.

Terminal Pitch: 2.54 mm

The 2.54mm terminal pitch allows for easy connection and soldering in standard PCB layouts, ensuring hassle-free integration.

No. of Words Code: 128K

The 128K words code enables easy identification of the product's memory capacity, simplifying system configuration and management.

Maximum Supply Voltage (Vsup): 5.5V

The 5.5V maximum supply voltage provides a safe operating range for the product, ensuring reliability under varying voltage conditions.

Memory Density: 1048576 bit

With a memory density of 1,048,576 bits, the product offers high storage capacity for efficient data handling and processing.

Memory IC Type: STANDARD SRAM

The standard SRAM memory IC type ensures compatibility with a wide range of systems and applications, making it a versatile choice.

Output Enable: YES

The output enable feature allows for easy control of output signals, enhancing system flexibility and functionality.

Maximum Standby Current: 0.00025 Amp

The low maximum standby current of 0.00025 Amp helps conserve power and prolong battery life in standby mode.

Maximum Access Time: 70 ns

With a maximum access time of 70 ns, the product offers fast data retrieval and processing speeds for high-performance applications.

Technical Specifications

SRAM IS62C1024L-70W attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T32

JESD-609 Code:

e0

Length:

41.91 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Maximum Standby Current:

.00025 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

15.24 mm

Trade Compliance

IS62C1024L-70W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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