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IS62WV102416GBLL-45TLI-TR

Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution

IS62WV102416GBLL-45TLI-TR by Integrated Silicon Solution is a 1MX16 SRAM with 1048576 words and 16-bit memory width. Operating at -40 to 85 °C, it has a max access time of 45 ns and uses CMOS technology. Ideal for industrial applications requiring fast, asynchronous memory with a supply voltage range of 2.2V to 3.6V.

Median Price

$10.470

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,869 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 898 parts In-Stock

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$15.571

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Argo Parts USA

USA . 2,170 parts In-Stock

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Continental Prestige Electronics

USA . 476 parts In-Stock

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Bastille Electronics

Australia . 44 parts In-Stock

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Overview

Experience lightning-fast data access and seamless performance with the IS62WV102416GBLL-45TLI-TR SRAM by Integrated Silicon Solution. As a trusted manufacturer, ISS delivers top-quality memory solutions perfect for industrial applications. With a wide operating temperature range and low power consumption, this memory IC offers unparalleled reliability and efficiency. Upgrade your systems today with the IS62WV102416GBLL-45TLI-TR and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: ASYNCHRONOUS

Enables operations to be performed independently without requiring synchronization, providing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 3

Optimal voltage supply to ensure stable and efficient performance of the product.

Memory Density: 16777216 bit

High memory density allows for storing a large amount of data, making it suitable for applications that require extensive memory capacity.

Technical Specifications

SRAM IS62WV102416GBLL-45TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12 mm

Trade Compliance

IS62WV102416GBLL-45TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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