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CAT24C44VI-TE13

Onsemi

CAT24C44VI-TE13 by Onsemi

CAT24C44VI-TE13 by Onsemi is a 256-bit NON-VOLATILE SRAM with 16x16 organization, operating at 5V. It features SERIAL interface, SYNCHRONOUS mode, and -40 to 85°C temperature range. Ideal for industrial applications requiring small outline package and fast access time.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,445 parts In-Stock

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2,445

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Vyrian

USA . 656 parts In-Stock

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656

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

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650

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Distributors (Availability)

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$2.327

100+ parts

$2.210

1k+ parts

$2.210

10k+ parts

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3,000

$2.327

$2.210

$2.210

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Aztec Data Supply Inc.

USA . 568 parts In-Stock

1+ parts

$5.000

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568

$5.000

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Ampacity Inc.

Singapore . 1,626 parts In-Stock

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$10.000

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1,626

$10.000

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Semicontronic

India . 1,567 parts In-Stock

1+ parts

$16.000

100+ parts

$15.600

1k+ parts

$15.520

10k+ parts

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1,567

$16.000

$15.600

$15.520

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AZTECH Wire

Italy . 656 parts In-Stock

1+ parts

$19.571

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656

$19.571

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Kulean Microsystems

USA . 7,883 parts In-Stock

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7,883

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Continental Prestige Electronics

USA . 5,815 parts In-Stock

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5,815

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TANS Electronics

Latvia . 5,665 parts In-Stock

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5,665

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Problanco Electronics

Mexico . 2,864 parts In-Stock

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2,864

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Argo Parts USA

USA . 2,605 parts In-Stock

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2,605

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SupplyDigital Components

Austria . 932 parts In-Stock

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932

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Corphita

USA . 828 parts In-Stock

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828

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UHIMA Technologies

Türkiye . 605 parts In-Stock

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605

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Corohmni

South Africa . 102 parts In-Stock

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102

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Enhance your electronic projects with the CAT24C44VI-TE13 by Onsemi, a top-tier manufacturer known for quality and innovation. This non-volatile SRAM offers reliability and efficiency, making it ideal for a variety of applications. With a compact design and industrial-grade temperature tolerance, this memory IC provides exceptional value and performance. Upgrade your devices with the cutting-edge technology of the CAT24C44VI-TE13 and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components.

Surface Mount: YES

Allows for easy installation and soldering onto circuit boards.

Operating Mode: SYNCHRONOUS

Ensures precise timing and synchronization of data transfers.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement for compatibility with various systems and devices.

No. of Terminals: 8

Provides multiple connection points for secure and reliable data transmission.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Operates effectively in cold temperatures without loss of performance.

Technology: CMOS

Utilizes low power consumption and high speed operation for efficient performance.

Memory IC Type: NON-VOLATILE SRAM

Retains data even when power is turned off, ensuring data integrity and reliability.

Maximum Access Time: 375 ns

Offers quick access to stored information for fast data retrieval and processing.

Technical Specifications

SRAM CAT24C44VI-TE13 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

375 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

CAT24C44VI-TE13 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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