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CAT24C44VI-GT3

Onsemi

CAT24C44VI-GT3 by Onsemi

CAT24C44VI-GT3 by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization, operating at 5V. It features synchronous operation, industrial temperature grade, and serial interface. Ideal for applications requiring small outline packages and low standby current consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,466 parts In-Stock

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Vyrian

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Nova Conductors

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$2.382

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$2.263

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$2.263

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$2.690

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Semicontronic

India . 628 parts In-Stock

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$18.000

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$17.550

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$17.460

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AZTECH Wire

Italy . 494 parts In-Stock

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$18.823

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Component Stockers USA

USA . 590 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 8,226 parts In-Stock

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Kulean Microsystems

USA . 3,154 parts In-Stock

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Problanco Electronics

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Argo Parts USA

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Corphita

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UHIMA Technologies

Türkiye . 961 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Corohmni

South Africa . 381 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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SupplyDigital Components

Austria . 211 parts In-Stock

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Overview

Enhance your electronic projects with the CAT24C44VI-GT3 by Onsemi, a top-quality non-volatile SRAM memory IC. With a compact design and industrial-grade temperature range, this chip offers reliable performance in various applications. Benefit from its low power consumption, high memory density, and seamless integration thanks to its small outline package. Trust Onsemi's expertise in semiconductor manufacturing for exceptional quality and durability. Upgrade your devices with the CAT24C44VI-GT3 and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy installation onto circuit boards, making the product suitable for automated assembly processes.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer, improving overall performance and efficiency of the product.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial applications where heat resistance is important.

Technology: CMOS

Utilizes Complementary Metal-Oxide-Semiconductor technology, providing low power consumption and high noise immunity.

Memory IC Type: NON-VOLATILE SRAM

Being non-volatile ensures that data is retained even when power is lost, making it reliable for storing critical information.

Technical Specifications

SRAM CAT24C44VI-GT3 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.00003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

CAT24C44VI-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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