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CAT22C10LA-20

Onsemi

CAT22C10LA-20 by Onsemi

CAT22C10LA-20 by Onsemi is a 256-bit NON-VOLATILE SRAM with 64x4 organization, operating at 5V. It has an access time of 200ns and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring reliable memory storage in a compact IN-LINE package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 894 parts In-Stock

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Vyrian

USA . 461 parts In-Stock

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Native Components

USA . 760 parts In-Stock

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$0.790

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760

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Northwest PG Solutions

USA . 2,168 parts In-Stock

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$0.869

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Kulean Microsystems

USA . 4,770 parts In-Stock

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SupplyDigital Components

Austria . 2,674 parts In-Stock

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TANS Electronics

Latvia . 2,329 parts In-Stock

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Problanco Electronics

Mexico . 1,273 parts In-Stock

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Corphita

USA . 539 parts In-Stock

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UHIMA Technologies

Türkiye . 278 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Enhance your electronic projects with the CAT22C10LA-20 by Onsemi, a top-quality Non-Volatile SRAM that offers reliable performance and durability. Designed by a trusted manufacturer, this memory IC is ideal for industrial applications, providing a memory density of 256 bits and a maximum access time of 200 ns. With a nominal supply voltage of 5V and a wide operating temperature range, this product ensures seamless operation in various environments. Upgrade your systems with the CAT22C10LA-20 and experience unparalleled value and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Nominal Supply Voltage / Vsup (V): 5

Works efficiently at a standard voltage level, ensuring compatibility with most systems.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, making it suitable for industrial use where heat may be a concern.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance.

Memory IC Type: NON-VOLATILE SRAM

Being non-volatile, the memory retains data even when power is lost, ideal for applications requiring data persistence.

Maximum Access Time: 200 ns

Offers quick access to data, improving overall system performance.

Technical Specifications

SRAM CAT22C10LA-20 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

200 ns

JESD-30 Code:

R-PDIP-T18

JESD-609 Code:

e3

Length:

21.97 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

18

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

7.62 mm

Trade Compliance

CAT22C10LA-20 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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