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CAT24C44VI

Onsemi

CAT24C44VI by Onsemi

CAT24C44VI by Onsemi is a 256-bit non-volatile SRAM with 16x16 organization. It operates at 5V, has a max access time of 375ns, and consumes up to 3mA. Ideal for industrial applications requiring small outline packages and synchronous operation.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,492 parts In-Stock

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2,492

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Vyrian

USA . 803 parts In-Stock

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803

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Nova Conductors

Japan . 38 parts In-Stock

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38

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Semi Source

USA . 7 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,583 parts In-Stock

1+ parts

$2.770

100+ parts

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2,583

$2.770

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$5.868

100+ parts

$5.575

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$5.575

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500

$5.868

$5.575

$5.575

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Ampacity Inc.

Singapore . 1,559 parts In-Stock

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$6.000

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1,559

$6.000

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AZTECH Wire

Italy . 803 parts In-Stock

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$8.025

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803

$8.025

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Semicontronic

India . 162 parts In-Stock

1+ parts

$23.000

100+ parts

$22.425

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$22.310

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162

$23.000

$22.425

$22.310

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Kulean Microsystems

USA . 8,027 parts In-Stock

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8,027

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Problanco Electronics

Mexico . 7,487 parts In-Stock

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SupplyDigital Components

Austria . 7,483 parts In-Stock

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Continental Prestige Electronics

USA . 4,497 parts In-Stock

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TANS Electronics

Latvia . 1,835 parts In-Stock

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Argo Parts USA

USA . 1,596 parts In-Stock

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1,596

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UHIMA Technologies

Türkiye . 661 parts In-Stock

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661

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Corphita

USA . 305 parts In-Stock

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305

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Corohmni

South Africa . 256 parts In-Stock

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256

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Microchip USA

USA . 199 parts In-Stock

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199

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Overview

Unlock the power of reliable and high-quality memory with the CAT24C44VI from Onsemi. Designed for industrial applications, this non-volatile SRAM offers a compact package and low power consumption, making it ideal for a wide range of projects. With a maximum supply voltage of 5.5V and quick access time of 375ns, this memory IC provides seamless performance that will enhance your designs. Trust Onsemi's expertise in semiconductor technology to deliver a product that exceeds expectations and adds value to your projects. Elevate your designs with the CAT24C44VI today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material ensures durability and reliability, making this SRAM product suitable for a variety of applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination with other components in the system, improving overall performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions, ensuring reliable operation in various settings.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this SRAM energy-efficient and reliable for long-term use.

Memory IC Type: NON-VOLATILE SRAM

Being non-volatile, this SRAM retains data even when power is removed, ensuring data integrity and reliability in critical applications.

Technical Specifications

SRAM CAT24C44VI attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

375 ns

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.00003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

CAT24C44VI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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