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CAT22C10JA-30

Onsemi

CAT22C10JA-30 by Onsemi

CAT22C10JA-30 by Onsemi is a 256-bit NON-VOLATILE SRAM with 64x4 organization, operating at 5V. It has a max access time of 300ns and operates in ASYNCHRONOUS mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 613 parts In-Stock

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Digiode

USA . 120 parts In-Stock

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120

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Distributors (Availability)

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Native Components

USA . 407 parts In-Stock

1+ parts

$5.760

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407

$5.760

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Kulean Microsystems

USA . 7,270 parts In-Stock

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7,270

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SupplyDigital Components

Austria . 7,227 parts In-Stock

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TANS Electronics

Latvia . 6,524 parts In-Stock

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6,524

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Problanco Electronics

Mexico . 1,487 parts In-Stock

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1,487

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Northwest PG Solutions

USA . 1,051 parts In-Stock

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$5.645

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1,051

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$5.645

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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735

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Corphita

USA . 683 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Enhance your electronic projects with the CAT22C10JA-30 by Onsemi, a top-quality SRAM memory IC that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted industry leader, this non-volatile SRAM is ideal for a wide range of applications. With a small outline package and industrial temperature grade, this memory IC delivers efficient operation at high speeds. Experience seamless data storage and retrieval with the CAT22C10JA-30, providing customers with exceptional value and benefits for all their electronic design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the internal components of the SRAM.

Surface Mount: YES

Easy to install on a printed circuit board, making it suitable for automated assembly processes.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of the SRAM, providing efficient communication between devices.

Nominal Supply Voltage (Vsup): 5V

Standard voltage requirement for compatibility with various systems and components.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, suitable for industrial and harsh environments.

Technology: CMOS

Low power consumption and high noise immunity, ensuring efficient operation.

Memory IC Type: NON-VOLATILE SRAM

Retains data even when power is turned off, ensuring data integrity and reliability.

Maximum Access Time: 300 ns

Fast access time for quick data retrieval and processing, improving overall system performance.

Technical Specifications

SRAM CAT22C10JA-30 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

300 ns

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

10.3 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

4

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

CAT22C10JA-30 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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