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CAT22C10JI-30TE7

Onsemi

CAT22C10JI-30TE7 by Onsemi

CAT22C10JI-30TE7 by Onsemi is a 256-bit NON-VOLATILE SRAM with 64x4 organization, operating at 5V. It features an industrial temperature grade range of -40 to 85 °C and has a max access time of 300 ns. Ideal for applications requiring fast, asynchronous memory operations in small outline packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 998 parts In-Stock

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Vyrian

USA . 191 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 117 parts In-Stock

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$0.281

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$0.270

117

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$0.270

Northwest PG Solutions

USA . 1,957 parts In-Stock

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$0.310

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$0.273

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$0.273

Problanco Electronics

Mexico . 4,444 parts In-Stock

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TANS Electronics

Latvia . 4,375 parts In-Stock

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Kulean Microsystems

USA . 3,742 parts In-Stock

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SupplyDigital Components

Austria . 1,245 parts In-Stock

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UHIMA Technologies

Türkiye . 747 parts In-Stock

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Corohmni

South Africa . 116 parts In-Stock

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Corphita

USA . 98 parts In-Stock

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Overview

Enhance your electronic devices with the CAT22C10JI-30TE7 by Onsemi, a top-quality Non-Volatile SRAM that delivers reliable performance and durability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this SRAM offers superior functionality for a wide range of applications. Experience seamless operation, faster data access, and increased memory density with this innovative product. Upgrade your systems today with the CAT22C10JI-30TE7 and elevate your electronics to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard voltage levels in electronic systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the product can withstand high temperature environments, making it suitable for industrial applications.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the product efficient and reliable for data storage.

Memory IC Type: NON-VOLATILE SRAM

Being non-volatile, the SRAM retains data even when power is disconnected, providing a reliable memory solution for critical data storage applications.

Technical Specifications

SRAM CAT22C10JI-30TE7 attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

300 ns

Additional Features:

DATA RETENTION > 10 YEARS

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

10.3 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

4

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

CAT22C10JI-30TE7 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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