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CAT24C44LI-G

Onsemi

CAT24C44LI-G by Onsemi

CAT24C44LI-G by Onsemi is a 256-bit NON-VOLATILE SRAM with 16x16 organization. It operates at 5V, has a max access time of 375ns, and consumes only 3mA max supply current. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,042 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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Vyrian

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A2Z Electronics, Inc.

USA . 41 parts In-Stock

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Bristol Electronics

USA . 41 parts In-Stock

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Aztec Data Supply Inc.

USA . 776 parts In-Stock

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$4.950

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AZTECH Wire

Italy . 434 parts In-Stock

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Problanco Electronics

Mexico . 7,075 parts In-Stock

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Microchip USA

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SupplyDigital Components

Austria . 6,087 parts In-Stock

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Kulean Microsystems

USA . 5,628 parts In-Stock

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Continental Prestige Electronics

USA . 5,540 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,868 parts In-Stock

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TANS Electronics

Latvia . 2,303 parts In-Stock

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Corphita

USA . 2,190 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Argo Parts USA

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Corohmni

South Africa . 120 parts In-Stock

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Overview

Experience the cutting-edge technology of the CAT24C44LI-G by Onsemi, a premium quality non-volatile SRAM memory IC. With a focus on innovation and reliability, Onsemi delivers a product that exceeds industry standards, offering customers seamless integration and superior performance in a variety of applications. Trust in the CAT24C44LI-G for your memory needs and unlock a world of possibilities with its impressive features and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that protects the internal components of the SRAM, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination between the SRAM and other components in the system, leading to efficient data transfer.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply that is widely compatible with various systems, making integration easier.

Maximum Operating Temperature: 85 °C

High maximum operating temperature range ensures the SRAM can function reliably in demanding industrial environments.

Memory IC Type: NON-VOLATILE SRAM

Non-volatile memory ensures that data is retained even when power is lost, making it ideal for applications that require data persistence.

Technical Specifications

SRAM CAT24C44LI-G attributes and parameters. Explore more SRAM devices from Onsemi

Specs

Maximum Access Time:

375 ns

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.27 mm

Memory Density:

256 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Maximum Standby Current:

.00003 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CAT24C44LI-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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