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IDT71V67803S133PFGI

Renesas Electronics

IDT71V67803S133PFGI by Renesas Electronics

The Renesas Electronics IDT71V67803S133PFGI is a 512Kx18 CACHE SRAM with synchronous operation at 133 MHz. It features a low profile flatpack package, operates at an industrial temperature grade of -40 to 85 °C, and has a max supply current of 280 mA. Ideal for high-speed memory applications requiring fast access times and reliable performance in harsh environments.

Median Price

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< 1k

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Vyrian

USA . 283 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 820 parts In-Stock

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$6.443

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Ampacity Inc.

Singapore . 158 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Bastille Electronics

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Overview

Experience unparalleled performance and reliability with the Renesas Electronics IDT71V67803S133PFGI SRAM. Renowned for its top-notch quality and cutting-edge technology, Renesas Electronics ensures that this product exceeds expectations in various applications. From industrial to automotive, this CACHE SRAM offers seamless operation and lightning-fast access times, making it a valuable asset for customers seeking high-performance memory solutions. Trust Renesas Electronics to deliver unmatched value and innovation with the IDT71V67803S133PFGI SRAM.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures that data is transferred at a consistent rate, improving overall performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a standard voltage of 3.3V, this SRAM is compatible with a wide range of systems and power supplies.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can withstand harsh environmental conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving the efficiency and reliability of the SRAM.

Technical Specifications

SRAM IDT71V67803S133PFGI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

4.2 ns

Additional Features:

PIPELINED ARCHITECTURE

Maximum Clock Frequency (fCLK):

133 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

9437184 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX18

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.07 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

280 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

IDT71V67803S133PFGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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