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CY62157ELL-45ZSXIT

Infineon Technologies

CY62157ELL-45ZSXIT by Infineon Technologies

Infineon's CY62157ELL-45ZSXIT is a 512Kx16 SRAM with 45ns access time, operating at 5V. It features a small outline package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current.

Median Price

$6.750

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$8.400

100+ parts

-

1k+ parts

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10k+ parts

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100

$8.400

-

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Chip Stock

USA . 15,890 parts In-Stock

1+ parts

-

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15,890

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Cyclops Electronics Ltd

UK . 10,000 parts In-Stock

1+ parts

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10,000

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Vyrian

USA . 4,644 parts In-Stock

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4,644

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NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$5.100

10k+ parts

$4.710

2,000

-

-

$5.100

$4.710

Digiode

USA . 434 parts In-Stock

1+ parts

-

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434

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LIBRA Elektronik GmbH

Germany . 21 parts In-Stock

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21

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 13 parts In-Stock

1+ parts

$4.514

100+ parts

-

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13

$4.514

-

-

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Modulus Dynamics

Lithuania . 3,887 parts In-Stock

1+ parts

$4.611

100+ parts

$4.427

1k+ parts

$4.242

10k+ parts

-

3,887

$4.611

$4.427

$4.242

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Aztec Data Supply Inc.

USA . 1,305 parts In-Stock

1+ parts

$5.639

100+ parts

-

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10k+ parts

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1,305

$5.639

-

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AZTECH Wire

Italy . 266 parts In-Stock

1+ parts

$6.167

100+ parts

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266

$6.167

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Continental Prestige Electronics

USA . 3,440 parts In-Stock

1+ parts

$8.400

100+ parts

-

1k+ parts

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10k+ parts

$8.232

3,440

$8.400

-

-

$8.232

Netroflash

USA . 100 parts In-Stock

1+ parts

$8.400

100+ parts

-

1k+ parts

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10k+ parts

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100

$8.400

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Semicontronic

India . 2,594 parts In-Stock

1+ parts

$9.000

100+ parts

$8.775

1k+ parts

$8.730

10k+ parts

-

2,594

$9.000

$8.775

$8.730

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Ampacity Inc.

Singapore . 2,769 parts In-Stock

1+ parts

$13.000

100+ parts

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2,769

$13.000

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Microchip USA

USA . 2,329 parts In-Stock

1+ parts

$46.368

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2,329

$46.368

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QUARKTWIN TECHNOLOGY LTD

USA . 13,184 parts In-Stock

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13,184

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Lixinc

USA . 12,076 parts In-Stock

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12,076

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,249 parts In-Stock

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6,249

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Alle Elektronik GmbH

Germany . 4,166 parts In-Stock

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4,166

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Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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3,700

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RC Electronics

USA . 3,625 parts In-Stock

1+ parts

-

100+ parts

$8.570

1k+ parts

$7.820

10k+ parts

$7.590

3,625

-

$8.570

$7.820

$7.590

Argo Parts USA

USA . 887 parts In-Stock

1+ parts

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887

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Corphita

USA . 353 parts In-Stock

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353

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Overview

Unlock the power of seamless data storage and retrieval with the CY62157ELL-45ZSXIT by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch quality and reliability in their SRAM products. Ideal for industrial applications, this 512KX16 memory chip offers lightning-fast access times of 45ns, ensuring optimal performance. With a compact design and low power consumption, the CY62157ELL-45ZSXIT provides exceptional value for customers looking for efficient memory solutions. Elevate your project with Infineon's cutting-edge technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance between durability and cost-effectiveness.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

This shape optimizes space utilization on PCBs.

Operating Mode: ASYNCHRONOUS

Ensures fast and efficient data transfer without the need for synchronization signals.

Nominal Supply Voltage / Vsup (V): 5

Provides compatibility with standard power sources.

Power Supplies (V): 5

Consistent power delivery for reliable performance.

No. of Terminals: 44

Sufficient number of terminals for effective connectivity in a circuit.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Saves space and allows for compact designs.

Maximum Operating Temperature: 85°C

Can withstand high temperatures in industrial environments.

Organization: 512KX16

Offers a large storage capacity for data-intensive applications.

Output Characteristics: 3-STATE

Provides flexibility in controlling output signals.

Minimum Standby Voltage: 2 V

Allows for low-power standby operation.

Minimum Operating Temperature: -40°C

Suitable for use in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures reliable electrical connections with minimal corrosion.

Terminal Position: DUAL

Facilitates easy installation and connectivity.

Maximum Seated Height: 1.194 mm

Low profile design for space-constrained applications.

Width: 10.16 mm

Compact size for efficient PCB layout.

Minimum Supply Voltage (Vsup): 4.5 V

Provides a safe operating range for the device.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

Withstands high temperatures during reflow soldering.

Length: 18.415 mm

Optimized length for efficient board placement.

Temperature Grade: INDUSTRIAL

Suitable for use in harsh industrial environments.

Technology: CMOS

Offers low power consumption and high speed performance.

Parallel or Serial: PARALLEL

Enables fast data transfer in parallel mode.

Terminal Form: GULL WING

Easy to solder and provides mechanical strength.

Maximum Supply Current: 25 mA

Efficient power consumption for energy savings.

No. of Words: 524288 words

Large memory capacity for storing significant amounts of data.

Memory Width: 16

Wide data path for faster data access.

Terminal Pitch: 0.8 mm

Offers precise and reliable connections on the PCB.

No. of Words Code: 512K

Clearly indicates the memory capacity of the device.

Moisture Sensitivity Level (MSL): 3

Suitable for a wide range of environmental conditions.

Maximum Supply Voltage (Vsup): 5.5 V

Provides a safe operating range for the device.

Memory Density: 8388608 bit

High memory density for storing large amounts of information.

Memory IC Type: STANDARD SRAM

Reliable and widely used memory technology.

Maximum Standby Current: 0.000008 Amp

Very low standby power consumption for energy efficiency.

Maximum Access Time: 45 ns

Fast access time for quick retrieval of data.

Technical Specifications

SRAM CY62157ELL-45ZSXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.194 mm

Maximum Standby Current:

.000008 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

CY62157ELL-45ZSXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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