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IS66WVE4M16EALL-70BLI

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.

Median Price

$6.111

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Verical

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Nova Conductors

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Micros sp.j. W. Kędra i J. Lic

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Micros

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Overview

Experience the next level of performance and reliability with the IS66WVE4M16EALL-70BLI by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS delivers top-quality SRAMs that are perfect for a wide range of applications. With its advanced technology and robust design, this product guarantees seamless operation and exceptional data retention. Its compact size and easy-to-install package make it ideal for space-constrained environments. Whether you're working on industrial systems or consumer electronics, the IS66WVE4M16EALL-70BLI offers unmatched value, benefits, and advantages that will exceed your expectations. Upgrade your devices today and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protects the internal components of the SRAM, making it a reliable choice for various applications.

Surface Mount: YES

With the surface mount feature, this SRAM can be easily mounted onto a PCB, saving valuable space and simplifying the assembly process.

No. of Functions: 1

This SRAM offers a single function, simplifying its integration into electronic designs and reducing complexity.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy handling and straightforward placement on a PCB, promoting ease of use and efficient utilization of available space.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables this SRAM to function independently from a clock signal, offering greater flexibility and compatibility with various systems.

Input/Output Type: COMMON

The common input/output type ensures compatibility with other devices, facilitating seamless communication and data transfer within a system.

No. of Terminals: 48

With 48 terminals, this SRAM provides a suitable interface for connecting to other components, promoting easy integration and efficient data flow.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array, thin profile, and fine pitch package style offer a compact footprint, enabling high-density packaging and enhancing overall system performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM can withstand demanding environments, ensuring reliable operation even in challenging conditions.

Organization: 4MX16

The 4Mx16 organization signifies a memory structure with 4 megabits of storage capacity and a memory width of 16 bits, providing ample memory space for storing and manipulating data.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow multiple SRAM devices to share a common bus, enabling efficient data sharing and enhancing system integration.

Minimum Standby Voltage: 1.7 V

This SRAM can operate efficiently even at a minimum standby voltage of 1.7 volts, conserving power and extending battery life in portable devices.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this SRAM can function reliably in extremely cold environments, making it suitable for applications in various industries.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish provides excellent conductivity, preventing corrosion and ensuring optimal electrical performance for this SRAM.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly, allowing for easy integration into electronic systems.

No. of Ports: 1

Featuring one port, this SRAM enables efficient data transfer between the memory and other components, optimizing overall system performance.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2 millimeters, this SRAM contributes to the compactness of the overall system design, allowing for efficient space utilization.

Width: 6 mm

With a width of 6 millimeters, this SRAM provides a small footprint, making it suitable for compact electronic devices and applications with limited space.

Minimum Supply Voltage (Vsup): 1.7 V

Operating efficiently at a minimum supply voltage of 1.7 volts, this SRAM promotes energy efficiency and extends battery life.

Peak Reflow Temperature °C: 260

The SRAM can endure peak reflow temperatures of up to 260°C during the soldering process, ensuring proper solder joint formation and reliability.

Length: 8 mm

With a length of 8 millimeters, this SRAM offers a compact form factor, enabling efficient integration into various electronic designs.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature ranges, this SRAM is well-suited for applications in harsh environments that require robust performance and reliability.

Technology: CMOS

Utilizing CMOS technology, this SRAM provides low power consumption, high-speed operation, and excellent noise immunity, making it an ideal choice for power-sensitive applications.

Parallel or Serial: PARALLEL

The parallel configuration allows for simultaneous data transfer, enabling fast and efficient read/write operations for this SRAM.

Terminal Form: BALL

Featuring ball terminal forms, this SRAM ensures reliable and secure connections when mounted on a corresponding PCB with matching terminal sockets.

Maximum Supply Current: 25 mA

With a maximum supply current of 25 milliamperes, this SRAM ensures stable performance and efficient power usage within specified operating conditions.

No. of Words: 4194304 words

This SRAM provides a generous memory capacity of 4,194,304 words, allowing for extensive data storage and manipulation in various applications.

Memory Width: 16

With a memory width of 16 bits, this SRAM enables the processing and storage of data in chunks, enhancing computational efficiency and overall system performance.

Terminal Pitch: 0.75 mm

The 0.75-millimeter terminal pitch simplifies board layout and facilitates high-density mounting, enabling compact designs and efficient space utilization.

No. of Words Code: 4M

The 4M words code signifies a memory capacity of 4 megabytes, providing substantial storage capabilities for data-intensive applications.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this SRAM has a moderate sensitivity to moisture and requires standard precautions during handling, storage, and assembly.

Maximum Supply Voltage (Vsup): 1.95 V

Operating within a maximum supply voltage of 1.95 volts, this SRAM offers stable performance and compatibility with various power sources.

Memory Density: 67108864 bit

With a memory density of 67,108,864 bits, this SRAM offers ample storage capacity for data-intensive tasks, enabling efficient data handling and processing.

Memory IC Type: PSEUDO STATIC RAM

This SRAM employs pseudo static RAM technology, combining the advantages of dynamic RAM and static RAM, resulting in fast and non-volatile memory access, making it suitable for real-time applications.

Maximum Standby Current: 0.00015 Amp

With a maximum standby current of 0.00015 Ampere, this SRAM exhibits low power consumption during idle periods, conserving energy and extending battery life.

Maximum Access Time: 70 ns

Featuring a maximum access time of 70 nanoseconds, this SRAM ensures fast and efficient data retrieval, promoting enhanced system performance and responsiveness.

Technical Specifications

SRAM IS66WVE4M16EALL-70BLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

70 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Reverse Pinout:

NO

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00015 Amp

Minimum Standby Voltage:

1.7 V

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS66WVE4M16EALL-70BLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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