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IS66WVE4M16EBLL-55BLI

Integrated Silicon Solution

IS66WVE4M16EBLL-55BLI by Integrated Silicon Solution

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 5 parts In-Stock

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Prism Electronics

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 25,078 parts In-Stock

1+ parts

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100+ parts

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25,078

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Technical Specifications

SRAM IS66WVE4M16EBLL-55BLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

55 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

48

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Reverse Pinout:

NO

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00015 Amp

Minimum Standby Voltage:

2.7 V

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS66WVE4M16EBLL-55BLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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