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CY14B104LA-ZS25XIT

Infineon Technologies

CY14B104LA-ZS25XIT by Infineon Technologies

Infineon's CY14B104LA-ZS25XIT is a 512Kx8 SRAM with 3V nominal voltage, operating in industrial temperature range. It features parallel technology, 25ns access time, and non-volatile memory type. Ideal for applications requiring fast and reliable data storage in compact electronic devices.

Median Price

$39.725

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$39.725

100+ parts

-

1k+ parts

-

10k+ parts

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50

$39.725

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-

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Vyrian

USA . 1,383 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,383

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Digiode

USA . 278 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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278

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 2,326 parts In-Stock

1+ parts

$2.935

100+ parts

$2.818

1k+ parts

$2.700

10k+ parts

-

2,326

$2.935

$2.818

$2.700

-

AZTECH Wire

Italy . 535 parts In-Stock

1+ parts

$16.892

100+ parts

-

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535

$16.892

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Ampacity Inc.

Singapore . 1,632 parts In-Stock

1+ parts

$30.000

100+ parts

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10k+ parts

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1,632

$30.000

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Continental Prestige Electronics

USA . 6,403 parts In-Stock

1+ parts

$39.725

100+ parts

-

1k+ parts

-

10k+ parts

$38.930

6,403

$39.725

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-

$38.930

Netroflash

USA . 500 parts In-Stock

1+ parts

$39.725

100+ parts

-

1k+ parts

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10k+ parts

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500

$39.725

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Microchip USA

USA . 1,942 parts In-Stock

1+ parts

$91.368

100+ parts

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1k+ parts

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1,942

$91.368

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Argo Parts USA

USA . 3,723 parts In-Stock

1+ parts

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100+ parts

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3,723

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Corphita

USA . 586 parts In-Stock

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586

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Overview

Experience the next level of performance with the CY14B104LA-ZS25XIT from Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-notch quality and reliability in their SRAM products. This non-volatile memory device offers unmatched benefits such as fast access times, low power consumption, and industrial-grade temperature tolerance. Ideal for a wide range of applications where high-speed data processing is crucial, this SRAM provides a seamless solution for your memory needs. Upgrade to the CY14B104LA-ZS25XIT today and enjoy the superior value and advantages that only Infineon Technologies can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and resistance to environmental factors, making the SRAM reliable for various applications.

Surface Mount: YES

With surface mount capability, this SRAM is easy to integrate into circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

The asynchronous operation allows for faster access times and efficient data retrieval, making this SRAM suitable for high-speed applications.

Nominal Supply Voltage / Vsup: 3V

Operating at a nominal supply voltage of 3V ensures compatibility with a wide range of systems and devices.

Power Supplies: 3/3.3V

The dual power supply options give flexibility in system design and optimization of power consumption.

No. of Terminals: 44

With 44 terminals, this SRAM provides ample interfaces for connectivity and data transfer.

Package Style: SMALL OUTLINE, THIN PROFILE

The small outline and thin profile design of the package offer space-saving benefits and ease of integration in compact devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance ensures reliability and performance in harsh environmental conditions.

Organization: 512KX8

The 512Kx8 organization provides a large memory capacity and efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this SRAM is suitable for use in extreme cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for flexibility in board layout and system design.

Maximum Seated Height: 1.194 mm

The low seated height of the package ensures compatibility with slim and compact designs.

Width: 10.16 mm

The compact width of the SRAM package enables space-efficient placement on circuit boards.

Minimum Supply Voltage: 2.7V

The low minimum supply voltage requirement ensures compatibility with a wide range of power sources.

Maximum Time At Peak Reflow Temperature: 20s

The short reflow time minimizes the risk of heat damage during assembly processes.

Peak Reflow Temperature: 260C

The high peak reflow temperature tolerance ensures reliability and durability during soldering processes.

Length: 18.415 mm

The optimal length of the SRAM package allows for easy integration into various PCB layouts.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures stable performance in demanding operating conditions.

Technology: CMOS

The CMOS technology used in this SRAM offers low power consumption and high-speed data processing capabilities.

Parallel or Serial: PARALLEL

The parallel data transfer mode provides efficient and fast communication between the memory and the system.

Terminal Form: GULL WING

The gull-wing terminal form offers ease of soldering and secure mechanical connections.

Maximum Supply Current: 70 mA

The low maximum supply current requirement results in efficient power usage and reduced heat generation.

No. of Words: 524288 words

The large number of words allows for extensive data storage and retrieval capabilities.

Memory Width: 8

The 8-bit memory width enables efficient data handling and processing in various applications.

Terminal Pitch: 0.8 mm

The narrow terminal pitch facilitates compact design and space savings on the circuit board.

No. of Words Code: 512K

The 512K words code ensures compatibility and seamless integration with systems and devices.

Moisture Sensitivity Level (MSL): 3

The MSL level 3 rating ensures resistance to moisture and environmental factors, enhancing the durability of the SRAM.

Maximum Supply Voltage: 3.6V

The high maximum supply voltage tolerance provides flexibility in power supply options and compatibility with various systems.

Memory Density: 4194304 bit

The high memory density allows for extensive data storage and processing capabilities in the SRAM.

Memory IC Type: NON-VOLATILE SRAM

The non-volatile nature of this SRAM ensures data retention even in the absence of power, making it suitable for critical applications.

Maximum Standby Current: 0.005 Amp

The low standby current consumption ensures energy efficiency and prolonged battery life in portable devices.

Maximum Access Time: 25 ns

The fast maximum access time enables quick data retrieval and high-speed operations in the SRAM.

Technical Specifications

SRAM CY14B104LA-ZS25XIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.194 mm

Maximum Standby Current:

.005 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

70 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

20

Width:

10.16 mm

Trade Compliance

CY14B104LA-ZS25XIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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