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R1RW0416DSB-2LR#D1

Renesas Electronics

R1RW0416DSB-2LR#D1 by Renesas Electronics

Renesas Electronics' R1RW0416DSB-2LR#D1 is a 256Kx16 SRAM with 12ns access time, operating at 3.3V. It features a small outline package, suitable for commercial applications requiring fast and reliable parallel memory operations. The device has a memory density of 4Mb and operates in an asynchronous mode within a temperature range of 0 to 70°C.

Median Price

$13.125

Lifecycle Status

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7

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< 1k

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Chip1Stop

Japan . 209 parts In-Stock

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$7.930

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$7.820

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Mouser Electronics

USA . 17 parts In-Stock

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$18.320

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$12.690

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Verical

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Vyrian

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Nova Conductors

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Semtec, LLC

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ACDS - Activité Composants Distribution Service

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Aztec Data Supply Inc.

USA . 174 parts In-Stock

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$2.640

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Corohmni

South Africa . 20 parts In-Stock

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$5.170

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$5.041

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$5.015

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Ampacity Inc.

Singapore . 214 parts In-Stock

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AZTECH Wire

Italy . 313 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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iodParts Technologies Inc.

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Overview

Experience unparalleled quality and reliability with the R1RW0416DSB-2LR#D1 by Renesas Electronics. Renowned for their cutting-edge technology, Renesas Electronics leads the industry in manufacturing top-of-the-line SRAM products like this one. With a wide range of applications, this SRAM offers customers exceptional value and benefits. From improved performance to enhanced functionality, the R1RW0416DSB-2LR#D1 is the perfect choice for all your memory needs. Trust Renesas Electronics to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring the longevity of the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Enhances performance by allowing for independent operations without the need for synchronization.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage level for efficient and reliable operation of the product.

No. of Terminals: 44

Provides versatile connectivity options for integration with other components in a circuit.

Technology: CMOS

Utilizes Complementary Metal-Oxide-Semiconductor technology, known for low power consumption and high noise immunity.

Memory IC Type: STANDARD SRAM

Uses Static Random Access Memory technology, offering fast access times and high-speed data retrieval.

Maximum Access Time: 12 ns

Ensures quick data access and processing for applications requiring high-speed performance.

Technical Specifications

SRAM R1RW0416DSB-2LR#D1 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

12 ns

JESD-30 Code:

R-PDSO-G44

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Position:

DUAL

Trade Compliance

R1RW0416DSB-2LR#D1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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