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CY7C1071DV33-12BAXIT

Infineon Technologies

CY7C1071DV33-12BAXIT by Infineon Technologies

CY7C1071DV33-12BAXIT by Infineon Technologies is a 2MX16 SRAM with 3.3V supply, 12ns access time, and 48 terminals. It operates in industrial temperatures and has a thin profile grid array package. Ideal for applications requiring fast parallel memory access in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 4,950 parts In-Stock

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Digiode

USA . 301 parts In-Stock

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Vyrian

USA . 173 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Modulus Dynamics

Lithuania . 914 parts In-Stock

1+ parts

$2.801

100+ parts

$2.689

1k+ parts

$2.577

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914

$2.801

$2.689

$2.577

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Ampacity Inc.

Singapore . 1,426 parts In-Stock

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$3.000

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Aztec Data Supply Inc.

USA . 154 parts In-Stock

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$3.181

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Corohmni

South Africa . 325 parts In-Stock

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$3.288

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325

$3.288

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Semicontronic

India . 662 parts In-Stock

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$6.000

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$5.850

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$5.820

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662

$6.000

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$5.820

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AZTECH Wire

Italy . 401 parts In-Stock

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$18.433

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$18.433

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Microchip USA

USA . 2,721 parts In-Stock

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$132.700

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$129.170

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$127.400

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$125.630

2,721

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$129.170

$127.400

$125.630

Component Stockers USA

USA . 73 parts In-Stock

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$1,656.140

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Argo Parts USA

USA . 4,779 parts In-Stock

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Continental Prestige Electronics

USA . 1,181 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Corphita

USA . 199 parts In-Stock

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199

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Overview

Unlock unparalleled performance and reliability with the CY7C1071DV33-12BAXIT by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch quality SRAM technology that exceeds expectations. This innovative product offers a wide range of applications, providing seamless integration for various projects. Experience the value and benefits of this high-quality memory solution, designed to optimize performance and enhance user experience. Choose Infineon Technologies for superior products that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the device.

Surface Mount: YES

Facilitates easy installation on circuit boards, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Allows for independent operation of input and output signals, enhancing flexibility in usage.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with standard power supply voltages, ensuring easy integration into existing systems.

No. of Terminals: 48

Provides sufficient connectivity options for interfacing with other components.

Maximum Operating Temperature: 85 °C

Suitable for use in industrial environments with varying temperature conditions.

Organization: 2MX16

Offers a high memory organization for storing and accessing data efficiently.

Memory IC Type: STANDARD SRAM

Utilizes standard SRAM technology for reliable and high-speed memory operations.

Maximum Access Time: 12 ns

Provides fast access to stored data, enhancing overall system performance.

Technical Specifications

SRAM CY7C1071DV33-12BAXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

9.5 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.05 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

250 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

CY7C1071DV33-12BAXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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