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CY14V101NA-BA45XIT

Infineon Technologies

CY14V101NA-BA45XIT by Infineon Technologies

Infineon's CY14V101NA-BA45XIT is a 64Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features parallel technology, 45ns access time, and non-volatile memory type. Ideal for applications requiring fast and reliable data storage in harsh environments.

Median Price

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Lifecycle Status

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6

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1k+

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Flip Electronics (Authorized)

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Vyrian

USA . 9,924 parts In-Stock

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USA . 9,695 parts In-Stock

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Chip Stock

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Digiode

USA . 525 parts In-Stock

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Nova Conductors

Japan . 32 parts In-Stock

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Ampacity Inc.

Singapore . 9,812 parts In-Stock

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Modulus Dynamics

Lithuania . 5,901 parts In-Stock

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$4.153

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$3.987

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$3.821

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Semicontronic

India . 9,773 parts In-Stock

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$14.000

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$13.650

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$13.580

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Argo Parts USA

USA . 3,173 parts In-Stock

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Continental Prestige Electronics

USA . 1,872 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Corphita

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Kepictronics

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Overview

Upgrade your electronic devices with the cutting-edge CY14V101NA-BA45XIT from Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies guarantees top-notch quality and reliability. This non-volatile SRAM offers unparalleled performance, making it ideal for a wide range of applications. With a 64KX16 organization and lightning-fast access time of 45 ns, this industrial-grade memory IC is sure to enhance the functionality of your products. Trust Infineon Technologies to deliver excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operates efficiently at a standard voltage level, ensuring compatibility with other components.

No. of Terminals: 48

Offers ample connectivity options for integrating with different systems and devices.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments with varying conditions.

Organization: 64KX16

Provides a large memory capacity with a wide data width, ideal for handling complex tasks and large datasets.

Technology: CMOS

Utilizes efficient CMOS technology for low power consumption and high-speed operation, improving overall performance.

Maximum Access Time: 45 ns

Delivers fast access times, enabling quick data retrieval and processing for improved system responsiveness.

Technical Specifications

SRAM CY14V101NA-BA45XIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

45 ns

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.008 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CY14V101NA-BA45XIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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