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71V416S10PHGI8

Renesas Electronics

71V416S10PHGI8 by Renesas Electronics

Renesas Electronics' 71V416S10PHGI8 is a 256Kx16 SRAM with 10ns max access time, operating at 3.3V. Ideal for industrial applications, it features a small outline package with dual terminals and Gull Wing form factor. This CMOS technology memory chip has a parallel interface and offers high performance in a compact design.

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Semicontronic

India . 705 parts In-Stock

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$1.000

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$0.975

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$0.970

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Aztec Data Supply Inc.

USA . 131 parts In-Stock

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$3.414

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AZTECH Wire

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Microchip USA

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$21.850

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$21.690

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$21.530

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Component Stockers USA

USA . 504 parts In-Stock

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$76.110

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QUARKTWIN TECHNOLOGY LTD

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Overview

Experience the unparalleled quality and reliability of Renesas Electronics with the 71V416S10PHGI8, a cutting-edge SRAM memory module designed to exceed expectations. Ideal for industrial applications, this innovative product offers lightning-fast access times and a wide operating temperature range, ensuring optimal performance in any environment. Trust Renesas Electronics to deliver top-notch technology that enhances your systems and boosts productivity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, making it suitable for various operating conditions.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards, saving time and effort during production.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power consumption and compatibility with modern electronics.

No. of Terminals: 44

Having 44 terminals enables seamless connection and communication with other components in the circuit for optimal performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can function reliably in various industrial environments without overheating.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures ensures consistent performance even in cold conditions, making it a versatile choice for different applications.

Technology: CMOS

The CMOS technology used in this SRAM offers low power consumption, high speed, and compatibility with a wide range of devices, making it a reliable choice for memory storage.

Maximum Access Time: 10 ns

The fast access time of 10 nanoseconds ensures quick data retrieval and processing, enhancing the overall performance of the system.

Technical Specifications

SRAM 71V416S10PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Current:

200 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

71V416S10PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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