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71V424S12PHGI8

Renesas Electronics

71V424S12PHGI8 by Renesas Electronics

Renesas Electronics' 71V424S12PHGI8 is a 512Kx8 SRAM with 3.3V supply voltage, operating in asynchronous mode. It features a small outline package, industrial temperature grade, and Gull Wing terminal form. Ideal for applications requiring fast access times and low standby current in industrial environments.

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India . 1,323 parts In-Stock

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AZTECH Wire

Italy . 832 parts In-Stock

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Overview

Discover the cutting-edge 71V424S12PHGI8 by Renesas Electronics, a top-tier SRAM memory solution designed to enhance performance and reliability in industrial applications. Renowned for their superior quality and innovative technology, Renesas Electronics delivers unparalleled value with this product, offering customers a seamless and efficient experience. With a compact design and impressive specifications, this SRAM memory is ideal for a wide range of industrial uses, providing a high level of functionality and precision. Upgrade your systems with the 71V424S12PHGI8 and experience the difference Renesas Electronics can make in your operations.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs have lower conduction losses and higher efficiency compared to P-CHANNEL IGBTs, making this product a good choice for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for improved current sharing and higher reliability in power control systems.

Maximum VCEsat: 2.45 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency and lower power dissipation.

Maximum Power Dissipation (Abs): 1000 W

With a high power dissipation rating, this IGBT can handle heavy loads and high power requirements effectively.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage allows for the handling of high voltage applications without the risk of breakdown.

Technical Specifications

SRAM 71V424S12PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

12 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

170 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

71V424S12PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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