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IS66WVS2M8BLL-104KLI

Integrated Silicon Solution

IS66WVS2M8BLL-104KLI by Integrated Silicon Solution

IS66WVS2M8BLL-104KLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates in industrial temperature range. Ideal for applications requiring fast, reliable data storage in compact electronic devices.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Vyrian

USA . 6,428 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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AZTECH Wire

Italy . 892 parts In-Stock

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$6.645

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Argo Parts USA

USA . 2,820 parts In-Stock

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Continental Prestige Electronics

USA . 2,642 parts In-Stock

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Bastille Electronics

Australia . 600 parts In-Stock

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Overview

Looking for reliable, high-quality SRAM memory solutions? Look no further than the IS66WVS2M8BLL-104KLI by Integrated Silicon Solution. With a compact rectangular package shape and operating at a speedy 104 MHz clock frequency, this synchronous SRAM is perfect for industrial applications where reliability is key. With a low standby voltage of 2.7V and a maximum supply current of just 15mA, this memory IC offers exceptional value and performance for your projects. Upgrade to IS66WVS2M8BLL-104KLI today and experience the difference in quality and efficiency!

Feature Benefit Bullets

Surface Mount: YES

Allows for easy attachment to circuit boards, making installation quick and convenient.

Package Shape: RECTANGULAR

The compact shape saves space in a circuit design, ideal for applications with limited real estate.

Operating Mode: SYNCHRONOUS

Ensures data is processed accurately and efficiently, crucial for high-performance systems.

Input/Output Type: COMMON

Simplifies communication between the memory and other components, reducing complexity in the design.

Nominal Supply Voltage / Vsup (V): 3

Compatible with standard voltage levels, ensuring easy integration into existing systems.

No. of Terminals: 8

Provides enough connections for the memory to communicate effectively with the rest of the circuit.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Offers a combination of features for enhanced performance and thermal management in a small form factor.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for a wide range of industrial applications.

Organization: 2MX8

Organized in a 2M x 8 configuration, providing ample storage capacity for data-intensive tasks.

Minimum Standby Voltage: 2.7 V

Allows the memory to retain data even at low power levels, ensuring data integrity during standby periods.

Technical Specifications

SRAM IS66WVS2M8BLL-104KLI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Clock Frequency (fCLK):

104 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-XDSO-N8

Length:

6 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX8

Output Enable:

NO

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Maximum Seated Height:

.8 mm

Maximum Standby Current:

.0002 Amp

Minimum Standby Voltage:

2.7 V

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

IS66WVS2M8BLL-104KLI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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