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IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

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Argo Parts USA

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Overview

Unlock the power of reliable memory with the IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, Integrated Silicon Solution delivers top-notch quality and performance. This SRAM module offers exceptional value and benefits for various applications. With its synchronous operation and industrial-grade temperature range, it ensures smooth and reliable data storage. Its compact size and surface mount package make it easy to integrate into any design. Experience the advantages of this pseudo static RAM and take your projects to new heights of efficiency and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This SRAM product uses a plastic/epoxy package body material, which provides durability and resistance to external elements, making it a reliable choice for various applications.

Surface Mount: YES

With surface mount capabilities, this SRAM product offers easy and efficient installation, reducing the need for additional components and making it suitable for space-constrained designs.

No. of Functions: 1

The single function provided by this SRAM product simplifies its usage and integration, making it ideal for applications that require a straightforward and focused functionality.

Package Shape: RECTANGULAR

The rectangular package shape of this SRAM product allows for easy PCB placement and alignment, ensuring convenient and efficient integration into electronic systems.

Operating Mode: SYNCHRONOUS

Operating in synchronous mode, this SRAM product maintains synchronization with the system clock, enabling efficient data transfer and enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

The nominal supply voltage of 1.8V ensures compatibility with various systems and power sources, providing flexibility and ease of integration for different applications.

No. of Terminals: 24

With 24 terminals, this SRAM product offers sufficient connectivity options and interfaces, allowing for seamless integration with other components or systems.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The grid array package style with a thin profile allows for efficient use of space on the PCB, making it suitable for compact designs without compromising on performance.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM product can withstand high-temperature environments, ensuring reliable operation in demanding conditions.

Organization: 16MX8

The organizational structure of 16MX8 means that this SRAM product has a capacity of 16 megabits (Mbit) and is configured as a 16-bit wide memory with 8 memory locations, providing ample storage and data processing capabilities.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this SRAM product remains functional even in extremely cold environments, making it suitable for various applications and harsh operating conditions.

Terminal Position: BOTTOM

The bottom terminal position of this SRAM product simplifies PCB routing and assembly, allowing for efficient placement and easy connection to other components or circuitry.

Maximum Seated Height: 1.2 mm

With a maximum seated height of 1.2mm, this SRAM product has a low-profile design, making it suitable for applications where space constraints are a concern.

Width: 6 mm

The compact width of 6mm ensures that this SRAM product can be integrated into small form factor devices or tight PCB layouts, offering versatility in design and packaging options.

Minimum Supply Voltage (Vsup): 1.7 V

With a minimum supply voltage of 1.7V, this SRAM product operates efficiently even at lower power levels, allowing for power-saving implementations and extended battery life in portable devices.

Length: 8 mm

The length of 8mm ensures that this SRAM product can fit within various device dimensions or PCB layouts, providing flexibility in design and integration options.

Temperature Grade: INDUSTRIAL

Designed for industrial-grade applications, this SRAM product meets the requirements and standards for reliable operation in harsh industrial environments, making it a robust choice for demanding scenarios.

Technology: CMOS

Built with complementary metal-oxide-semiconductor (CMOS) technology, this SRAM product offers low power consumption, high speed, and compatibility with a wide range of digital systems, making it suitable for diverse applications.

Parallel or Serial: PARALLEL

Operating in the parallel mode, this SRAM product enables simultaneous data transfer of multiple bits, resulting in faster and more efficient data processing, which is advantageous for applications that require high-speed data manipulation.

Terminal Form: BALL

The ball terminal form simplifies the attachment and soldering process, enhancing the reliability and ease of installation of this SRAM product onto the PCB, making it suitable for automated assembly processes.

No. of Words: 16777216 words

With a capacity of 16,777,216 words, this SRAM product offers ample memory storage for data and program execution, meeting the requirements of memory-intensive applications and enabling efficient data handling.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and manipulation, making this SRAM product suitable for applications that necessitate the handling of larger data sets or multi-byte operations.

Terminal Pitch: 1 mm

With a terminal pitch of 1mm, this SRAM product offers adequate spacing between terminals, facilitating easy connection and integration into PCB designs, improving manufacturing efficiency.

No. of Words Code: 16M

The coding of 16M signifies that this SRAM product has a memory capacity of 16 megabits (Mbit), providing abundant memory space for various applications and data storage requirements.

Maximum Supply Voltage (Vsup): 1.95 V

With a maximum supply voltage of 1.95V, this SRAM product operates within a safe voltage range, ensuring reliable performance and protecting it from potential voltage fluctuations or overvoltage conditions.

Memory Density: 134217728 bit

The memory density of 134,217,728 bits indicates the total amount of data that this SRAM product can store, offering high-capacity memory capabilities and meeting the needs of data-intensive applications.

Memory IC Type: PSEUDO STATIC RAM

Being a pseudo static RAM, this SRAM product combines the advantages of static RAM (SRAM) and dynamic RAM (DRAM), delivering faster access times similar to SRAM, while maintaining high memory density and lower power consumption like DRAM, making it a versatile and efficient memory option.

Technical Specifications

SRAM IS66WVH16M8ALL-166B1LI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

IS66WVH16M8ALL-166B1LI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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