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IS66WVH16M8ALL-166B1LI

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI by Integrated Silicon Solution is a 16MX8 SRAM with synchronous operation and 3-STATE output. It operates at 1.8V, has a memory density of 134217728 bit, and offers fast access time of 36 ns. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

$6.920

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 28 parts In-Stock

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$6.920

100+ parts

$5.575

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$4.961

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28

$6.920

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$4.961

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Chip Stock

USA . 21,540 parts In-Stock

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Vyrian

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IBS Electronics

USA . 108 parts In-Stock

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Nova Conductors

Japan . 90 parts In-Stock

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Elcom Components

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Aztec Data Supply Inc.

USA . 40 parts In-Stock

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$4.343

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40

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AZTECH Wire

Italy . 373 parts In-Stock

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$15.797

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Lixinc

USA . 8,840 parts In-Stock

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Continental Prestige Electronics

USA . 4,548 parts In-Stock

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Argo Parts USA

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Aranea Global

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Overview

Discover the cutting-edge IS66WVH16M8ALL-166B1LI by Integrated Silicon Solution, a top-tier SRAM memory solution that guarantees superior performance and reliability. Crafted with precision using high-quality materials, this memory module boasts a synchronous operation mode and 3-STATE output characteristics for seamless functionality. Ideal for industrial applications, this memory device offers a nominal supply voltage of 1.8V and a wide temperature range, ensuring reliable operation in challenging environments. Elevate your projects with the unparalleled speed and efficiency of the IS66WVH16M8ALL-166B1LI, setting new standards in memory technology. Unlock limitless possibilities and unmatched value with this exceptional product from Integrated Silicon Solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Nominal Supply Voltage / Vsup (V): 1.8

Efficient power usage with a low supply voltage, reducing energy consumption.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfers and more efficient performance.

Memory Density: 134217728 bit

High memory density allows for storing a large amount of data in a compact space.

Maximum Access Time: 36 ns

Fast access time ensures quick retrieval of data, making the product suitable for high-performance applications.

Technical Specifications

SRAM IS66WVH16M8ALL-166B1LI attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

Maximum Access Time:

36 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

60 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS66WVH16M8ALL-166B1LI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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