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IDT71V547S100PFGI

Renesas Electronics

IDT71V547S100PFGI by Renesas Electronics

The Renesas Electronics IDT71V547S100PFGI is a 128Kx36 ZBT SRAM with synchronous operation, 10ns access time, and 3.3V nominal voltage. It is ideal for industrial applications requiring high-speed parallel memory solutions in a compact flatpack package with low profile design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,236 parts In-Stock

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1,236

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Nova Conductors

Japan . 300 parts In-Stock

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300

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AZTECH Wire

Italy . 392 parts In-Stock

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$12.574

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392

$12.574

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Semicontronic

India . 1,336 parts In-Stock

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$13.000

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$12.675

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$12.610

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Ampacity Inc.

Singapore . 394 parts In-Stock

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$29.000

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394

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Argo Parts USA

USA . 3,555 parts In-Stock

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Continental Prestige Electronics

USA . 672 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the Renesas Electronics IDT71V547S100PFGI ZBT SRAM. Renowned for its superior quality and cutting-edge technology, Renesas Electronics delivers unmatched value to customers seeking high-speed memory solutions for industrial applications. With a wide operating temperature range and synchronous operation, this SRAM offers seamless integration and efficient data processing. Trust Renesas Electronics to provide advanced memory solutions that exceed expectations and elevate your products to new heights of performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Surface Mount: YES

The surface mount option makes it easier to install and integrate the SRAM into various devices and systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and coordinated data transfer, enhancing overall performance.

Nominal Supply Voltage: 3.3V

The nominal voltage requirement of 3.3V makes this SRAM compatible with a wide range of devices and power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this SRAM can withstand challenging environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this SRAM efficient and reliable.

Technical Specifications

SRAM IDT71V547S100PFGI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Additional Features:

FLOW-THROUGH ARCHITECTURE

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e3

Length:

20 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

IDT71V547S100PFGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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