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CY14E101J2-SXIT

Infineon Technologies

CY14E101J2-SXIT by Infineon Technologies

Infineon's CY14E101J2-SXIT is a 128Kx8 non-volatile SRAM with 1048576-bit memory density. Operating at 5V, it features synchronous mode and Gull Wing terminals on a small outline package. Ideal for industrial applications requiring reliable data storage in harsh environments.

Median Price

$6.940

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 6,380 parts In-Stock

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Arrow

USA . 2,500 parts In-Stock

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$6.940

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Verical

USA . 2,500 parts In-Stock

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$6.940

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Chip1Stop

Japan . 2,500 parts In-Stock

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$7.107

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Flip Electronics

USA . 5,000 parts In-Stock

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Vyrian

USA . 3,257 parts In-Stock

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Digiode

USA . 975 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,927 parts In-Stock

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$1.974

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Corohmni

South Africa . 276 parts In-Stock

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$2.520

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$2.520

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Modulus Dynamics

Lithuania . 2,979 parts In-Stock

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$3.408

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$3.272

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$3.135

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Ampacity Inc.

Singapore . 3,398 parts In-Stock

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$5.900

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Semicontronic

India . 3,155 parts In-Stock

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$5.900

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$5.752

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$5.723

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Component Stockers USA

USA . 435 parts In-Stock

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$134.570

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Argo Parts USA

USA . 1,053 parts In-Stock

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Corphita

USA . 607 parts In-Stock

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Continental Prestige Electronics

USA . 222 parts In-Stock

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Bastille Electronics

Australia . 62 parts In-Stock

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Overview

Experience seamless performance and reliability with the CY14E101J2-SXIT by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies offers top-quality SRAM products that cater to a wide range of applications. The CY14E101J2-SXIT provides customers with unparalleled value, benefits, and advantages, ensuring optimal functionality and efficiency. Trust in Infineon Technologies to deliver cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard power supply voltages, making integration into existing systems straightforward.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications.

Organization: 128KX8

Provides a good balance between memory capacity and data width for efficient data storage and access.

Technology: CMOS

Low power consumption and high noise immunity, ideal for battery-powered devices and noise-sensitive environments.

Moisture Sensitivity Level (MSL): 3

Can withstand moderate levels of moisture, suitable for a wide range of operating environments.

Memory IC Type: NON-VOLATILE SRAM

Retains data without the need for a constant power source, ensuring data persistence in case of power outages.

Technical Specifications

SRAM CY14E101J2-SXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.889 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.727 mm

Maximum Standby Current:

.00015 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.8985 mm

Trade Compliance

CY14E101J2-SXIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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