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71V124SA10PHGI8

Renesas Electronics

71V124SA10PHGI8 by Renesas Electronics

Renesas Electronics 71V124SA10PHGI8 is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous mode, 10ns access time, and 1.27mm terminal pitch. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Astute Electronics Inc

. 1,750 parts In-Stock

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VNN

France . 1,499 parts In-Stock

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Vyrian

USA . 1,059 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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AZTECH Wire

Italy . 382 parts In-Stock

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$8.852

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382

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Semicontronic

India . 482 parts In-Stock

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$15.000

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$14.625

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$14.550

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482

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Ampacity Inc.

Singapore . 257 parts In-Stock

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$20.000

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257

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Argo Parts USA

USA . 1,937 parts In-Stock

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Continental Prestige Electronics

USA . 738 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Microchip USA

USA . 375 parts In-Stock

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375

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Discover the Renesas Electronics 71V124SA10PHGI8, a top-quality SRAM that boasts reliability and efficiency. Renowned for their cutting-edge technology, Renesas Electronics ensures that this product meets the highest standards in the industry. Ideal for industrial applications, this SRAM offers fast access times and low standby currents, making it a valuable asset for any project. Elevate your designs with the exceptional performance and versatile capabilities of the 71V124SA10PHGI8 by Renesas Electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material makes the package lightweight and durable, ideal for portable devices.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a low nominal supply voltage of 3.3V helps in saving power and making the product energy efficient.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode allows for independent operation of different parts of the memory, enhancing flexibility in data access.

Organization: 128KX8

The organization of 128KX8 provides a balance between memory capacity and data width, suitable for various applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this product can withstand extended usage in challenging environments.

Technical Specifications

SRAM 71V124SA10PHGI8 attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e3

Length:

20.95 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP32,.46

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.01 Amp

Minimum Standby Voltage:

3.15 V

Sub-Category:

SRAMs

Maximum Supply Current:

150 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

10.16 mm

Trade Compliance

71V124SA10PHGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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