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7130LA100CB

Renesas Electronics

7130LA100CB by Renesas Electronics

Renesas Electronics' 7130LA100CB is a MIL-PRF-38535 screened SRAM with 1KX8 organization, operating at 5V. It features a max operating temperature of 125°C, asynchronous mode, and common I/O type. Ideal for military applications requiring fast access times and low standby current.

Median Price

$156.863

Lifecycle Status

EOL

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4

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< 1k

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Nova Conductors

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Vyrian

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Eagle Technology Solutions

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AZTECH Wire

Italy . 863 parts In-Stock

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Ampacity Inc.

Singapore . 481 parts In-Stock

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Continental Prestige Electronics

USA . 4,472 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Overview

Unlock unparalleled performance and reliability with the Renesas Electronics 7130LA100CB dual-port SRAM. Crafted with precision using high-quality materials, this military-grade memory module guarantees exceptional speed and efficiency, making it ideal for a wide range of applications. From aerospace to telecommunications, this product offers unmatched value and benefits to customers seeking top-notch memory solutions. Stay ahead of the curve with Renesas Electronics and experience unrivaled quality like never before.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides durability and protects the internal components, ensuring a longer lifespan for the product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent reading and writing of data without the need for a clock signal, increasing flexibility and speed.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes it compatible with a wide range of systems and power sources.

Output Characteristics: 3-STATE

3-STATE output allows the device to disconnect from the data bus when not in use, reducing power consumption and improving overall system efficiency.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems, making it a reliable choice for memory applications.

Memory IC Type: DUAL-PORT SRAM

Dual-port SRAM allows for simultaneous access by multiple devices, enabling fast and efficient data transfer in multi-processor systems or applications that require high-speed data processing.

Technical Specifications

SRAM 7130LA100CB attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T48

JESD-609 Code:

e0

Length:

60.96 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

48

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DIP

Package Equivalence Code:

DIP48,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

4.826 mm

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

7130LA100CB Memory ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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