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7130LA25JI8

Integrated Device Technology

7130LA25JI8 by Integrated Device Technology

7130LA25JI8 by Integrated Device Technology is a 1KX8 MULTI-PORT SRAM with 25 ns access time, operating at 5V. It features a 3-STATE output and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage in electronic devices.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,180 parts In-Stock

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VNN

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Nova Conductors

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Ampacity Inc.

Singapore . 1,528 parts In-Stock

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$1.000

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AZTECH Wire

Italy . 401 parts In-Stock

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Continental Prestige Electronics

USA . 3,874 parts In-Stock

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Argo Parts USA

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Microchip USA

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Aranea Global

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Overview

Elevate your electronic designs with the 7130LA25JI8 by Integrated Device Technology. As a leader in the industry, IDT ensures top-notch quality and reliability in their products. This SRAM chip offers unparalleled performance and versatility, making it perfect for a wide range of applications. With its advanced features and efficient design, the 7130LA25JI8 provides exceptional value and benefits to customers seeking cutting-edge solutions for their projects. Experience the difference with IDT's innovative technology and take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions.

Surface Mount: YES

Easy to mount on PCBs, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage that is commonly used in electronic circuits, ensuring compatibility.

No. of Terminals: 52

Sufficient number of terminals for connectivity and data transfer.

Maximum Operating Temperature: 85 °C

Can operate under high temperature conditions, suitable for industrial applications.

Organization: 1KX8

Organized as 1K words of 8 bits each, providing a good balance between memory capacity and access speed.

Memory IC Type: MULTI-PORT SRAM

Multi-port capability allows for simultaneous access from multiple devices, increasing efficiency.

Technical Specifications

SRAM 7130LA25JI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

25 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Length:

19.1262 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

52

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.572 mm

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

19.1262 mm

Trade Compliance

7130LA25JI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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