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7130LA100JI8

Integrated Device Technology

7130LA100JI8 by Integrated Device Technology

7130LA100JI8 by Integrated Device Technology is a 1Kx8 MULTI-PORT SRAM with 8192-bit memory density. Operating at 5V, it features an access time of 100ns and supports asynchronous mode. Ideal for industrial applications requiring fast and reliable parallel memory storage.

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3

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1k+

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VNN

France . 6,350 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 66 parts In-Stock

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Ampacity Inc.

Singapore . 317 parts In-Stock

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$1.000

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AZTECH Wire

Italy . 402 parts In-Stock

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Argo Parts USA

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Aranea Global

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Continental Prestige Electronics

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Microchip USA

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Overview

Elevate your electronics with the 7130LA100JI8 by Integrated Device Technology, a top-tier manufacturer known for their high-quality SRAM products. Perfect for industrial applications, this multi-port SRAM offers unparalleled reliability and performance. With a 1Kx8 organization and 3-STATE output characteristics, this chip carrier package delivers fast access times and low standby currents, making it an ideal choice for demanding projects. Experience the value and benefits of cutting-edge technology with the 7130LA100JI8.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a common and stable supply voltage, making it compatible with a wide range of systems.

Organization: 1KX8

Organized in a 1K x 8 configuration, providing sufficient memory capacity for various applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, improving overall efficiency.

Maximum Access Time: 100 ns

Offers fast access time, allowing for quick and efficient data retrieval.

Technical Specifications

SRAM 7130LA100JI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

100 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQCC-J52

JESD-609 Code:

e0

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Ports:

2

No. of Terminals:

52

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC52,.8SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

140 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Trade Compliance

7130LA100JI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

PCN

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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