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7130LA25TFGI8

Integrated Device Technology

7130LA25TFGI8 by Integrated Device Technology

7130LA25TFGI8 by Integrated Device Technology is a 1Kx8 SRAM with a memory density of 8192 bits. It operates at an industrial temperature grade of -40 to 85°C, with a max access time of 25ns. Ideal for applications requiring fast and reliable data storage in harsh environments.

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VNN

France . 2,730 parts In-Stock

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Vyrian

USA . 330 parts In-Stock

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Nova Conductors

Japan . 41 parts In-Stock

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Ampacity Inc.

Singapore . 252 parts In-Stock

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$2.000

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AZTECH Wire

Italy . 884 parts In-Stock

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Continental Prestige Electronics

USA . 2,403 parts In-Stock

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Aranea Global

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Argo Parts USA

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Overview

Experience unmatched quality and reliability with the 7130LA25TFGI8 by Integrated Device Technology. As a leading manufacturer in the industry, IDT's SRAM products are trusted for their high performance and durability. Ideal for a wide range of applications, this multi-port SRAM offers customers unparalleled value with its fast access time, low standby current, and versatile functionality. Trust IDT to deliver the superior memory solutions your project needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the SRAM, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, enhancing the functionality of the product.

Package Shape: SQUARE

The square shape of the package allows for efficient use of space on a circuit board, making it ideal for compact electronic devices.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode ensures efficient and independent operation of the SRAM, improving overall performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures stable and consistent power delivery to the SRAM, enhancing its reliability.

Power Supplies (V): 5

The consistent 5V power supply supports the optimal functioning of the SRAM, making it a dependable choice for various applications.

No. of Terminals: 64

With 64 terminals, this SRAM is versatile and can accommodate a wide range of connections, making it suitable for diverse electronics projects.

Package Style (Meter): FLATPACK

The flatpack style of the package allows for easy integration and installation, making it a convenient choice for electronics assembly.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM can withstand high temperatures, making it suitable for industrial environments.

Organization: 1KX8

The 1Kx8 organization allows for efficient data storage and retrieval, enabling fast and reliable performance of the SRAM.

Output Characteristics: 3-STATE

The 3-STATE output characteristics provide flexibility in data transmission, enhancing the versatility of the SRAM for various applications.

Technical Specifications

SRAM 7130LA25TFGI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

25 ns

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e3

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

64

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Equivalence Code:

QFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.004 Amp

Minimum Standby Voltage:

2 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

7130LA25TFGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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