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CY7C1061G30-10ZSXIT

Infineon Technologies

CY7C1061G30-10ZSXIT by Infineon Technologies

Infineon Technologies' CY7C1061G30-10ZSXIT is a 1MX16 SRAM with an operating voltage of 2.2V to 3.6V and max access time of 10ns. It is suitable for industrial applications requiring standard SRAM memory with a density of 16Mbit and parallel interface.

Median Price

$51.610

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 931 parts In-Stock

1+ parts

$61.700

100+ parts

-

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931

$61.700

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DigiKey

USA . 3,411 parts In-Stock

1+ parts

$61.910

100+ parts

$52.587

1k+ parts

$48.261

10k+ parts

-

3,411

$61.910

$52.587

$48.261

-

Mouser Electronics

USA . 451 parts In-Stock

1+ parts

$61.910

100+ parts

$52.590

1k+ parts

$40.760

10k+ parts

-

451

$61.910

$52.590

$40.760

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Avnet

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$33.462

10k+ parts

$32.232

1,000

-

-

$33.462

$32.232

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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$41.520

10k+ parts

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1,000

-

-

$41.520

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Verical

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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$41.520

10k+ parts

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1,000

-

-

$41.520

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Flip Electronics (Authorized)

USA . 3 parts In-Stock

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3

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Distributors (In-Stock)

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Digiode

USA . 973 parts In-Stock

1+ parts

$44.840

100+ parts

-

1k+ parts

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973

$44.840

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-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$46.470

100+ parts

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10

$46.470

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-

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Chip Stock

USA . 8,100 parts In-Stock

1+ parts

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8,100

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Vyrian

USA . 932 parts In-Stock

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932

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Flip Electronics

USA . 3 parts In-Stock

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3

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,053 parts In-Stock

1+ parts

$5.198

100+ parts

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1,053

$5.198

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Ampacity Inc.

Singapore . 1,101 parts In-Stock

1+ parts

$33.790

100+ parts

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1,101

$33.790

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Semicontronic

India . 1,023 parts In-Stock

1+ parts

$33.790

100+ parts

$32.945

1k+ parts

$32.776

10k+ parts

-

1,023

$33.790

$32.945

$32.776

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Modulus Dynamics

Lithuania . 5,294 parts In-Stock

1+ parts

$40.630

100+ parts

$39.005

1k+ parts

$37.380

10k+ parts

-

5,294

$40.630

$39.005

$37.380

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Corohmni

South Africa . 307 parts In-Stock

1+ parts

$40.630

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307

$40.630

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Corphita

USA . 784 parts In-Stock

1+ parts

$42.480

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784

$42.480

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$45.541

100+ parts

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1k+ parts

$43.719

10k+ parts

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100

$45.541

-

$43.719

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Continental Prestige Electronics

USA . 1,315 parts In-Stock

1+ parts

$46.470

100+ parts

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$45.541

1,315

$46.470

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-

$45.541

Futuretech Components

Singapore . 7,860 parts In-Stock

1+ parts

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100+ parts

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7,860

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Argo Parts USA

USA . 4,959 parts In-Stock

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4,959

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QUARKTWIN TECHNOLOGY LTD

USA . 4,170 parts In-Stock

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4,170

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 180 parts In-Stock

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180

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Overview

Discover the CY7C1061G30-10ZSXIT by Infineon Technologies, a high-quality SRAM with exceptional performance and reliability. Manufactured by Infineon Technologies, a renowned industry leader, this product offers numerous advantages for various applications. With its compact package shape and surface mount capabilities, it provides easy integration into any design. The asynchronous operating mode ensures seamless operation, while the nominal supply voltage of 3V guarantees efficient power consumption. With a memory density of 16,777,216 bits and a maximum access time of 10ns, this SRAM delivers outstanding speed and storage capacity. Don't miss out on the value, benefits, and advantages that the CY7C1061G30-10ZSXIT brings to your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY materials provide durability and reliability, making this product suitable for long-term use.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation, saving time and effort during assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for fast and independent access to each memory location, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a supply voltage of 3V ensures compatibility with a wide range of devices and systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, making this SRAM an energy-efficient solution.

Memory IC Type: STANDARD SRAM

Being a standard SRAM, this memory IC offers reliable and fast data storage and retrieval capabilities for various applications.

Maximum Access Time: 10 ns

The fast access time of 10 ns ensures quick data access, making this SRAM suitable for high-performance computing and data processing tasks.

Technical Specifications

SRAM CY7C1061G30-10ZSXIT attributes and parameters. Explore more SRAM devices from Infineon Technologies

Specs

Maximum Access Time:

10 ns

JESD-30 Code:

R-PDSO-G54

Length:

22.415 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

54

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

PURE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Width:

10.16 mm

Trade Compliance

CY7C1061G30-10ZSXIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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