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APS6404L-3SQRX-SN

Ap Memory Technology

APS6404L-3SQRX-SN by Ap Memory Technology

APS6404L-3SQRX-SN by Ap Memory Technology is an 8MX8 SRAM with synchronous operation, 133 MHz clock frequency, and 67108864 bit memory density. It is ideal for applications requiring high-speed data processing in a compact form factor. The package features a small outline design with gull wing terminals for easy surface mounting.

Median Price

$3.070

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,843 parts In-Stock

1+ parts

$3.070

100+ parts

$2.660

1k+ parts

$2.470

10k+ parts

$2.390

1,843

$3.070

$2.660

$2.470

$2.390

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 21 parts In-Stock

1+ parts

$1.840

100+ parts

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21

$1.840

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Vyrian

USA . 2,094 parts In-Stock

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2,094

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Rutronik

Germany . 618 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,176 parts In-Stock

1+ parts

$1.840

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10k+ parts

$1.803

6,176

$1.840

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$1.803

Argo Parts USA

USA . 2,347 parts In-Stock

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$1.840

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2,347

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Netroflash

USA . 100 parts In-Stock

1+ parts

$1.840

100+ parts

$1.803

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100

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$1.803

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Authorized Procurement Solutions

USA . 1,556 parts In-Stock

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1,556

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Overview

AP Memory Quad SPI (QSPI) PSRAM SDRs in a USON8 Package delivers Internet of Things (IoT) RAM ranging from 16M to 64M densities with 2M x8 or 8M x8 organization. The PSRAM SDRs are offered in the USON8 package resulting in a compact solution compared to SOP8 but keeping the simplicity of PCB. The Quad SPI Pseudo Static Random Access Memory (PSRAM) SDRs feature a maximum clock frequency from 84MHz to 144MHz, depending on the device. Additionally, the devices support operating supply voltages in 1.8V and 3V versions, with an -40°C to 85°C industrial grade temperature range. AP Memory Quad SPI PSRAM SDRs in a USON8 package are ideal in memory selection for SoC applications requiring low pin count and ultra-low power extended memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and cost-effectiveness to the product.

Surface Mount: YES

Allows for easy installation and space-saving on circuit boards.

Package Shape: RECTANGULAR

Ensures compatibility with standard board layouts and designs.

Operating Mode: SYNCHRONOUS

Enables precise and coordinated data transfers within the memory.

Nominal Supply Voltage / Vsup (V): 3

Provides stable power supply for reliable performance.

No. of Terminals: 8

Simplifies connections and integration into electronic systems.

Package Style (Meter): SMALL OUTLINE

Ensures a compact form factor for space-constrained applications.

Maximum Operating Temperature: 105 °C

Allows for operation in high temperature environments without performance degradation.

Organization: 8MX8

Offers a balanced memory organization for efficient data management.

Minimum Operating Temperature: -40 °C

Ensures functionality even in extreme cold conditions.

Terminal Position: DUAL

Provides flexibility in orientation for easy installation.

Maximum Seated Height: 1.75 mm

Ideal for applications with height restrictions.

Maximum Clock Frequency (fCLK): 133 MHz

Supports high-speed data processing for quick access times.

Width: 3.9 mm

Compact width for efficient space utilization on the circuit board.

Minimum Supply Voltage (Vsup): 2.7 V

Allows for operation even with lower power supply levels.

Length: 4.9 mm

Compact length for space-efficient board layouts.

Technology: CMOS

Offers low power consumption and high noise immunity for reliable operation.

Terminal Form: GULL WING

Facilitates easy soldering and robust connections.

Maximum Supply Current: 7 mA

Ensures low power consumption for energy-efficient performance.

No. of Words: 835584 words

Provides a large storage capacity for data-intensive applications.

Memory Width: 8

Supports efficient data transfer with a wide memory width.

Terminal Pitch: 1.27 mm

Allows for precise positioning and connections on the circuit board.

No. of Words Code: 8M

Indicates the extensive memory capacity of the product.

Maximum Supply Voltage (Vsup): 3.6 V

Offers a safe operating range for the supply voltage.

Memory Density: 67108864 bit

Provides high storage density for large data processing tasks.

Memory IC Type: HYPERRAM

Offers advanced memory technology for high-speed data access.

Maximum Standby Current: 0.00025 Amp

Ensures minimal power consumption in standby mode for energy efficiency.

Technical Specifications

SRAM APS6404L-3SQRX-SN attributes and parameters. Explore more SRAM devices from Ap Memory Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

835584 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

1.75 mm

Maximum Standby Current:

.00025 Amp

Maximum Supply Current:

7 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

APS6404L-3SQRX-SN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Ap Memory Technology

AP Memory is a fabless IC design and marketing company. We are a world leader in Pseudo-SRAM. We are also leading the world in AI memory solutions, particularly for 3D IC. Our headquarters is located in Hsinchu, Taiwan, with R&D centers in the US, China, Japan, and sales offices worldwide. Members of our R&D teams mainly come from a number of industry leaders such as Intel, Cypress, Qimonda, Mitsubishi, among others. Armed with strong development capabilities, we provide customized/optimized memory solutions to a wide range of applications.

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