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IDT71V424S10PHGI

Renesas Electronics

IDT71V424S10PHGI by Renesas Electronics

The Renesas Electronics IDT71V424S10PHGI is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 44 terminals in a small outline package. Ideal for industrial applications requiring fast and reliable memory storage.

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2

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1k+

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Corohmni

South Africa . 87 parts In-Stock

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AZTECH Wire

Italy . 829 parts In-Stock

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Semicontronic

India . 1,003 parts In-Stock

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Ampacity Inc.

Singapore . 416 parts In-Stock

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Argo Parts USA

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Overview

Enhance your electronic projects with the IDT71V424S10PHGI from Renesas Electronics, a top-of-the-line SRAM memory chip designed for efficiency and reliability. Renowned for its superior quality and cutting-edge technology, Renesas Electronics delivers products that meet the highest industry standards. This small outline, thin profile package offers 512Kx8 organization, making it perfect for industrial applications that require fast access times and low power consumption. Trust Renesas Electronics to provide you with the memory solutions you need for optimal performance and seamless integration. Elevate your projects with the IDT71V424S10PHGI and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring the longevity of the product.

Surface Mount: YES

Being surface mountable makes the product easy to integrate into circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V makes this SRAM energy-efficient and suitable for low-power applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this SRAM can withstand harsh environments and high temperatures without compromising performance.

Organization: 512KX8

The 512KX8 organization provides a large memory capacity and efficient data storage, making it suitable for applications that require significant data processing.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high-speed operation, making this SRAM ideal for battery-powered devices and high-performance computing systems.

Technical Specifications

SRAM IDT71V424S10PHGI attributes and parameters. Explore more SRAM devices from Renesas Electronics

Specs

Maximum Access Time:

10 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e3

Length:

18.41 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP44,.46,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.02 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

180 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.16 mm

Trade Compliance

IDT71V424S10PHGI Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Renesas Electronics

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