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IS61WV25616EDBLL-10TLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-10TLI-TR by Integrated Silicon Solution

STANDARD SRAM; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 1;

Median Price

$4.200

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 315 parts In-Stock

1+ parts

$4.200

100+ parts

$3.630

1k+ parts

-

10k+ parts

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315

$4.200

$3.630

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.895

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$2.895

-

-

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Vyrian

USA . 2,859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,859

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 2,153 parts In-Stock

1+ parts

$2.895

100+ parts

-

1k+ parts

-

10k+ parts

-

2,153

$2.895

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-

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Continental Prestige Electronics

USA . 2,043 parts In-Stock

1+ parts

$2.895

100+ parts

-

1k+ parts

-

10k+ parts

$2.837

2,043

$2.895

-

-

$2.837

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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20,000

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Technical Specifications

SRAM IS61WV25616EDBLL-10TLI-TR attributes and parameters. Explore more SRAM devices from Integrated Silicon Solution

Specs

JESD-609 Code:

e3

Memory IC Type:

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

IS61WV25616EDBLL-10TLI-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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