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SN74172JP4

Texas Instruments

SN74172JP4 by Texas Instruments

SN74172JP4 by Texas Instruments is an 8x2 STANDARD SRAM with 3-STATE output, operating in ASYNCHRONOUS mode. It features a CERAMIC RECTANGULAR package style with 24 terminals and operates b/w 0°C to 70°C. Ideal for parallel memory applications due to its TTL technology and THROUGH-HOLE terminal form at a pitch of 2.54 mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,188 parts In-Stock

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4,188

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Vyrian

USA . 2,772 parts In-Stock

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2,772

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,668 parts In-Stock

1+ parts

$4.086

100+ parts

-

1k+ parts

$4.546

10k+ parts

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1,668

$4.086

-

$4.546

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DigiPath Technology Company

USA . 1,343 parts In-Stock

1+ parts

$4.499

100+ parts

-

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1,343

$4.499

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ChromeModa Solutions

Germany . 4,988 parts In-Stock

1+ parts

$4.591

100+ parts

$3.765

1k+ parts

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4,988

$4.591

$3.765

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IDEA Electronic Components Group

UK . 951 parts In-Stock

1+ parts

$4.591

100+ parts

-

1k+ parts

$4.132

10k+ parts

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951

$4.591

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$4.132

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AZTECH Wire

Italy . 731 parts In-Stock

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$17.808

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731

$17.808

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One Stop Electronics

USA . 241 parts In-Stock

1+ parts

$24.000

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241

$24.000

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Corphita

USA . 4,764 parts In-Stock

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Overview

Unlock the power of reliable memory storage with the SN74172JP4 by Texas Instruments. With a reputation for excellence in semiconductor manufacturing, Texas Instruments delivers top-quality SRAM technology in a compact and efficient package. Ideal for a wide range of applications, this product offers customers the value of high-performance memory solutions that ensure seamless data management and operational efficiency. Trust Texas Instruments to provide cutting-edge technology that meets your memory needs with the SN74172JP4.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent durability and thermal conductivity, ensuring the product can withstand high temperatures and harsh environments.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent access to each memory location, improving overall speed and efficiency of data retrieval.

Output Characteristics: 3-STATE

3-STATE output allows for high impedance when not active, reducing power consumption and enabling efficient use of the memory.

Technology: TTL

TTL technology provides reliable and high-speed performance, making this SRAM a suitable choice for applications that require fast data processing.

Parallel or Serial: PARALLEL

Parallel communication enables faster data transfer compared to serial communication, making this SRAM ideal for applications where speed is crucial.

Technical Specifications

SRAM SN74172JP4 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

2

No. of Terminals:

24

No. of Words:

8 words

No. of Words Code:

8

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8X2

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74172JP4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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