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SN74170N-10

Texas Instruments

SN74170N-10 by Texas Instruments

SN74170N-10 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features asynchronous mode, open-collector output, and 40ns access time. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,395 parts In-Stock

1+ parts

-

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8,395

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Digiode

USA . 4,292 parts In-Stock

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4,292

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 943 parts In-Stock

1+ parts

$5.158

100+ parts

-

1k+ parts

$5.755

10k+ parts

-

943

$5.158

-

$5.755

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ChromeModa Solutions

Germany . 1,920 parts In-Stock

1+ parts

$5.795

100+ parts

$4.752

1k+ parts

-

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1,920

$5.795

$4.752

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IDEA Electronic Components Group

UK . 962 parts In-Stock

1+ parts

$5.795

100+ parts

-

1k+ parts

$5.216

10k+ parts

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962

$5.795

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$5.216

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AZTECH Wire

Italy . 435 parts In-Stock

1+ parts

$15.970

100+ parts

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435

$15.970

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One Stop Electronics

USA . 927 parts In-Stock

1+ parts

$29.000

100+ parts

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927

$29.000

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Corphita

USA . 2,205 parts In-Stock

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2,205

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DigiPath Technology Company

USA . 1,508 parts In-Stock

1+ parts

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100+ parts

$5.225

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1,508

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$5.225

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Overview

Enhance the performance of your electronic devices with the SN74170N-10 by Texas Instruments, a high-quality SRAM memory IC that offers exceptional reliability and efficiency. Designed with precision by a trusted manufacturer, this product is perfect for a wide range of applications in the electronics industry. With its advanced technology and innovative features, the SN74170N-10 provides customers with unparalleled value, benefits, and advantages. Upgrade your devices today and experience the difference with this top-of-the-line memory IC from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the SRAM, ensuring a longer lifespan.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for versatile and flexible use of the SRAM in various applications without the need for strict synchronization.

Nominal Supply Voltage / Vsup (V): 5

With a 5V supply voltage, this SRAM is compatible with many standard digital circuits, making it easy to integrate into existing systems.

Organization: 4X4

The 4X4 organization provides a balance between capacity and speed, making the SRAM suitable for a wide range of memory storage and retrieval tasks.

Output Characteristics: OPEN-COLLECTOR

The open-collector output allows for easy interfacing with other components and devices, enhancing flexibility and compatibility.

Technology: TTL

TTL technology ensures fast and reliable signal processing, making this SRAM a high-performance choice for memory-intensive applications.

Technical Specifications

SRAM SN74170N-10 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-PDIP-T16

Length:

19.305 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4X4

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

SN74170N-10 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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