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SN7481AJ4

Texas Instruments

SN7481AJ4 by Texas Instruments

SN7481AJ4 by Texas Instruments is a 16X1 SRAM with TTL technology. It operates asynchronously in commercial temperature grades from 0 to 70°C. Featuring open-collector output characteristics, it is ideal for parallel memory applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,796 parts In-Stock

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7,796

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Digiode

USA . 1,190 parts In-Stock

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1,190

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,324 parts In-Stock

1+ parts

$2.742

100+ parts

-

1k+ parts

$3.226

10k+ parts

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1,324

$2.742

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$3.226

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ChromeModa Solutions

Germany . 3,911 parts In-Stock

1+ parts

$3.081

100+ parts

$2.526

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3,911

$3.081

$2.526

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IDEA Electronic Components Group

UK . 1,023 parts In-Stock

1+ parts

$3.081

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$2.773

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1,023

$3.081

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$2.773

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AZTECH Wire

Italy . 760 parts In-Stock

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$9.098

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760

$9.098

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One Stop Electronics

USA . 1,501 parts In-Stock

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$10.000

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1,501

$10.000

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Corphita

USA . 658 parts In-Stock

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658

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DigiPath Technology Company

USA . 265 parts In-Stock

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$2.778

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265

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$2.778

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Overview

Upgrade your electronic devices with the high-quality SN7481AJ4 SRAM by Texas Instruments. Known for their reliable and innovative technology, Texas Instruments delivers top-notch products that meet the highest industry standards. This SRAM offers fast and efficient data storage capabilities, perfect for a wide range of applications in the electronics industry. Enhance your devices with the superior performance and durability of the SN7481AJ4, providing unmatched value and benefits to customers seeking the best in memory IC technology. Elevate your projects with Texas Instruments' finest SRAM solution today!

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages provide high thermal conductivity and mechanical strength, making the product more durable and reliable.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster communication and data transfer, enhancing overall performance.

No. of Terminals: 14

Having a sufficient number of terminals allows for more connectivity options and versatility in usage.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, the product can withstand demanding environmental conditions.

Technology: TTL

TTL technology offers fast response times and low power consumption, improving efficiency and performance.

Technical Specifications

SRAM SN7481AJ4 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T14

Memory IC Type:

Memory Width:

1

No. of Terminals:

14

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

16X1

Output Characteristics:

OPEN-COLLECTOR

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN7481AJ4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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