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SN74170J

Texas Instruments

SN74170J by Texas Instruments

SN74170J by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features asynchronous operation, open-collector output, and a max access time of 40ns. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

Median Price

$2.965

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 75 parts In-Stock

1+ parts

$2.260

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75

$2.260

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American Microsemiconductor Inc.

USA . 10 parts In-Stock

1+ parts

$3.670

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10

$3.670

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Electronic Expediters

USA . 5,041 parts In-Stock

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5,041

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Digiode

USA . 4,633 parts In-Stock

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4,633

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Vyrian

USA . 3,804 parts In-Stock

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3,804

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Manotoh

Italy . 62 parts In-Stock

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62

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Q Components

USA . 3 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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MISTER SPROCKETS

USA . 2 parts In-Stock

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Distributors (Availability)

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Parana Technologies

USA . 1,647 parts In-Stock

1+ parts

$3.329

100+ parts

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1k+ parts

$3.853

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1,647

$3.329

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$3.853

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DigiPath Technology Company

USA . 1,337 parts In-Stock

1+ parts

$3.666

100+ parts

$3.373

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1,337

$3.666

$3.373

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IDEA Electronic Components Group

UK . 1,850 parts In-Stock

1+ parts

$3.741

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$3.367

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1,850

$3.741

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ChromeModa Solutions

Germany . 661 parts In-Stock

1+ parts

$3.741

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$3.068

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661

$3.741

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One Stop Electronics

USA . 360 parts In-Stock

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$10.000

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360

$10.000

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AZTECH Wire

Italy . 292 parts In-Stock

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$12.096

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292

$12.096

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A-Z Elektronik GmbH

Germany . 7,166 parts In-Stock

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Corphita

USA . 2,430 parts In-Stock

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Overview

Unlock the power of reliable data storage with the SN74170J by Texas Instruments. Crafted with precision and innovation, this SRAM memory device offers unparalleled quality and performance. Ideal for a wide range of applications, from consumer electronics to industrial automation, this product provides seamless operation and fast access times. Trust in Texas Instruments' expertise to deliver a superior solution that meets your needs. Elevate your projects with the value and benefits that only the SN74170J can offer.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

Provides durability and protection for the components inside the package, ensuring reliability in various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage, making it compatible with many systems and easy to integrate.

Output Characteristics: OPEN-COLLECTOR

Allows for flexible interfacing with other devices, giving the user more control over the output signals.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance, making it efficient and reliable.

Memory Density: 16 bit

Offers a high memory density in a compact package, providing ample storage capacity for various applications.

Maximum Access Time: 40 ns

Provides fast access times, ensuring quick read and write operations, suitable for high-performance applications.

Technical Specifications

SRAM SN74170J attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

Maximum Access Time:

40 ns

JESD-30 Code:

R-GDIP-T16

Length:

19.56 mm

Memory Density:

16 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

16

No. of Words:

4 words

No. of Words Code:

4

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4X4

Output Characteristics:

OPEN-COLLECTOR

Output Enable:

NO

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Other Memory ICs

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SN74170J Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

NSN

5962-01-069-7939, 5962010697939

NIIN

010697939

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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