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SN74172NP3

Texas Instruments

SN74172NP3 by Texas Instruments

SN74172NP3 by Texas Instruments is an 8x2 standard SRAM with 3-STATE output, operating in asynchronous mode. It features a rectangular plastic/epoxy package with 24 terminals and operates at temperatures b/w 0°C to 70°C. Ideal for parallel applications, this TTL technology memory IC has a terminal pitch of 2.54mm and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,641 parts In-Stock

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Digiode

USA . 2,071 parts In-Stock

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2,071

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Distributors (Availability)

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Parana Technologies

USA . 1,162 parts In-Stock

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$2.306

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$2.806

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$2.306

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$2.806

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ChromeModa Solutions

Germany . 1,798 parts In-Stock

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$2.591

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$2.125

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IDEA Electronic Components Group

UK . 75 parts In-Stock

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$2.591

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$2.332

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75

$2.591

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$2.332

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AZTECH Wire

Italy . 687 parts In-Stock

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$8.194

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One Stop Electronics

USA . 1,444 parts In-Stock

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$9.000

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DigiPath Technology Company

USA . 2,377 parts In-Stock

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$2.336

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Corphita

USA . 1,206 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the SN74172NP3, a high-performance SRAM memory IC. With a reputation for excellence in semiconductor manufacturing, Texas Instruments delivers top-of-the-line products that meet the demands of various applications. The SN74172NP3 offers customers exceptional value, efficiency, and speed, making it the perfect choice for your next project. Trust in Texas Instruments to provide you with the best technology for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the SRAM, making it suitable for various environments and applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration and space-saving design in electronic circuits.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible and independent access to memory locations, enhancing performance and speed.

No. of Terminals: 24

With a sufficient number of terminals, the SRAM can effectively connect to other components and devices in a circuit.

No. of Words: 8 words

Having a capacity of 8 words allows for storing and retrieving a significant amount of data efficiently.

Output Characteristics: 3-STATE

3-state output allows for high impedance state, which can prevent bus contention and improve overall system performance.

Technology: TTL

TTL technology offers fast switching speeds and low power consumption, making the SRAM energy-efficient and reliable.

Parallel or Serial: PARALLEL

Parallel interface enables simultaneous data transfer, leading to faster read and write operations compared to serial communication.

Technical Specifications

SRAM SN74172NP3 attributes and parameters. Explore more SRAM devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

Memory Width:

2

No. of Terminals:

24

No. of Words:

8 words

No. of Words Code:

8

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8X2

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Sub-Category:

SRAMs

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74172NP3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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